Thin-film transistor device
AssigneePanasonic Corporation
InventorsTakahiro KAWASHIMA, Tomohiko ODA, Hikaru NISHITANI
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Abstract
A thin-film transistor device includes a gate electrode formed above a substrate, a gate insulating film formed on the gate electrode, a crystalline silicon thin film that is formed above the gate insulating film and has a channel region, an amorphous silicon thin film formed on the crystalline silicon thin film, and a source electrode and a drain electrode that are formed above the channel region, and the crystalline silicon thin film has a half-width of a Raman band corresponding to a phonon mode specific to the crystalline silicon thin film of 5.0 or more and less than 6.0 cm−1, and an average crystal grain size of about 50 nm or more and 300 nm or less.
Claims8
A thin-film transistor device comprising:
- a gate electrode formed above a substrate;
- a gate insulating film formed on the gate electrode;
- a crystalline silicon thin film that is formed above the gate insulating film and has a channel region,
- a semiconductor film formed on the crystalline silicon thin film;
- and
- a source electrode and a drain electrode that are formed above the channel region,
- wherein the crystalline silicon thin film has a half-width of a Raman band corresponding to a phonon mode specific to the crystalline silicon thin film of 5.0 cm−1 or more and less than 6.0 cm−1,
- the crystalline silicon thin film has an average crystal grain size of about 50 nm or more and 300 nm or less, and
- the crystalline silicon thin film contains crystals that are predominantly oriented in (100) direction among (111) and (100) directions and have an orientation intensity in the (100) direction obtained by electron back-scatter diffraction of 5 or less.
Dependencies are inferred from the claim text.