Method of Fabricating GOI Silicon Wafer, GOI Silicon Wafer and GOI Detection Method

Abstract

The invention discloses a method of fabricating a GOI silicon wafer, a GOI silicon wafer, and a method of GOI detection on the fabricated GOI silicon wafer, where the method of fabricating a GOI silicon wafer includes: in a process of fabricating a trench-type VDMOS, after a trench is formed and a gate oxide layer is grown, a poly-silicon layer is grown; and after the poly-silicon layer is grown, a mask of a metal layer is aligned with a silicon substrate with the poly-silicon layer grown, where the mask of the metal layer is a mask used in formation of the metal layer in the process of fabricating the VDMOS; and at least one pattern for GOI detection is formed on the silicon substrate with the poly-silicon layer grown, through the aligned mask of the metal layer in a photo-lithography to form a GOI silicon wafer. With the technical solution here according to an embodiment of the invention, an error between the GOI silicon wafer and the VDMOS device can be lowered, good accuracy can be achieved, and a resource can be saved effectively, and furthermore the accuracy in a result of GOI detection can be well improved.

Dependencies are inferred from the claim text.