Integrated Circuit, Semiconductor Device and Method of Manufacturing a Semiconductor Device
AssigneeInfineon Technologies AG
InventorsAndreas Meiser, Markus Zundel, Steffen Thiele
Life of this patent
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Abstract
An integrated circuit including a semiconductor device has a power component including a plurality of trenches in a cell array, the plurality of trenches running in a first direction, and a sensor component integrated into the cell array of the power component and including a sensor cell having an area which is smaller than an area of the cell array of the power component. The integrated circuit further includes isolation trenches disposed between the sensor component and the power component, an insulating material being disposed in the isolation trenches. The isolation trenches run in a second direction that is different from the first direction.
Claims24
An integrated circuit including a semiconductor device, comprising:
- a power component comprising a plurality of trenches in a cell array, the plurality of trenches running in a first direction;
- a sensor component integrated into the cell array of the power component and including a sensor cell having an area which is smaller than an area of the cell array of the power component;
- and
- isolation trenches disposed between the sensor component and the power component, an insulating material being disposed in the isolation trenches, the isolation trenches running in a second direction different from the first direction.
A semiconductor device including a transistor array, comprising a plurality of first transistors and at least a second transistor, at least one first and one second transistor being disposed adjacent to each other, each of the first and second transistors comprising:
- a source region disposed adjacent to a first main surface of a semiconductor substrate;
- and
- a gate electrode disposed in a trench formed in the first main surface, the gate electrode of the first transistor and the gate electrode of the second transistor being connected to a common gate potential;
- the semiconductor device further comprising an isolation trench disposed between the source region of the first transistor and the source region of the second transistor, the source region of the first transistor being connected to a first source potential, the source region of the second transistor being connected to a second source potential, the first source potential being different from the second source potential.
A method of manufacturing a semiconductor device, comprising:
- forming a plurality of parallel gate trenches in a first main surface of a semiconductor substrate, a substrate portion between adjacent gate trenches defining a mesa, the gate trenches running in a first direction;
- forming first and second transistors in the mesa;
- forming an isolation trench between one of the first transistors and one of the second transistors, the isolation trench running in a second direction different from the first direction;
- and
- forming at least one insulating material in the isolation trench.
Dependencies are inferred from the claim text.