Semiconductor device and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Junichiro SAKATA, Hiroyuki MIYAKE, Hideaki KUWABARA
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Junichiro SAKATA, Hiroyuki MIYAKE, Hideaki KUWABARA
Estimating the term…
An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor.
(canceled)
A method for manufacturing a semiconductor device comprising a pixel portion and a driver circuit portion, comprising:
A method for manufacturing a semiconductor device comprising a pixel portion and a driver circuit portion, comprising:
Dependencies are inferred from the claim text.