TFT Substrate Including Barrier Layer, Organic Light-Emitting Display Device Including the TFT Substrate, and Method of Manufacturinq the TFT Substrate

An organic light-emitting display device, comprising:

• a flexible substrate;
• a first barrier layer formed on the flexible substrate, the first barrier layer comprising a first silicon oxide layer and a first silicon nitride layer;
• a second barrier layer formed on the first barrier layer, the second barrier layer comprising a second silicon oxide layer and a second silicon nitride layer;
• a thin-film transistor (TFT) formed on the second barrier layer;
• and
• an organic light-emitting layer formed on the second barrier layer, the organic light-emitting layer connected to the TFT,
• wherein the first silicon oxide layer of the first barrier layer is disposed on the flexible substrate, and the first silicon nitride layer of the first barrier layer is disposed on the first silicon oxide layer of the first barrier layer, and wherein the second silicon nitride layer of the second barrier layer is disposed on the first barrier layer, and the second silicon oxide layer of the second barrier layer is disposed on the second silicon nitride layer of the second barrier layer.

A method of manufacturing a thin-film transistor (TFT) substrate, the method comprising:

• forming a first barrier layer on a plastic film, the first barrier layer comprising a first silicon oxide layer and a first silicon nitride layer;
• and
• forming a TFT and a second barrier layer on the first barrier layer, the second barrier layer comprising a second silicon oxide layer and a second silicon nitride layer,
• wherein the second silicon oxide layer is positioned adjacent to the TFT, and wherein the first barrier layer is formed in a first process chamber, and the TFT and the second barrier layer are formed in a second process chamber different from the first process chamber.