Semiconductor device and semiconductor unit including the same

A solid-state image pickup unit comprising a pixel section having a plurality of unit pixels two-dimensionally arranged in a matrix formation, wherein a unit pixel comprises:

• a conductive region of a first conductivity type having a surface adjacent to a multilayer wiring layer;
• a charge accumulation region of a second conductivity type formed within the first conductive region, wherein the charge accumulation region is separated from the surface of the conductive region adjacent to the multilayer wiring layer by a separation section;
• and
• a contact disposed in the conductive region, the contact electrically connecting the charge accumulation region and an external wire of the multilayer wiring layer.

A method of manufacturing a semiconductor device comprising:

• forming, within a conductive region of a first conductivity type, a charge accumulation region of a second conductivity type, wherein the charge accumulation region is separated from a surface of the conductive region adjacent to a multilayer wiring layer by a separation section;
• forming the multilayer wiring layer on a surface of the conductive region of the first conductivity type, wherein forming the multilayer wiring layer comprises:
• forming a connection hole extending from the multilayer wiring layer to the charge accumulation layer;
• providing an insulation film on a sidewall of the connection hole to form an insulation section;
• burying material in the connection hole such that a contact is electrically connected to the charge accumulation region;
• forming an external wire of the multilayer wiring layer, wherein the external wire is electrically connected to the charge accumulation region via the contact;
• and
• bonding a support substrate to the multilayer wiring layer.