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US 2014/0209861 A1Published application
Semiconductor device and fabrication method therefor, and power supply apparatus
AssigneeFujitsu Limited
InventorNAOYA OKAMOTO
Life of this patent
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Abstract
A semiconductor device includes a drift layer having a structure wherein a plurality of quantum dot layers each including a quantum dot containing InxGa1-xN (0≦x≦1) and a burying layer burying the quantum dot and containing n-type Inx(GayAl1-y)1-xN (0≦x≦1, 0≦y≦1) are stacked.
Claims20
A semiconductor device, comprising:
- a drift layer having a structure wherein a plurality of quantum dot layers each including a quantum dot containing InxGa1-xN (0≦x≦1) and a burying layer burying the quantum dot and containing n-type Inx(GayAl1-y)1-xN (0≦x≦1, 0≦y≦1) are stacked.
A power supply apparatus, comprising:
- a semiconductor device;
- wherein
- the semiconductor device includes a drift layer having a structure wherein a plurality of quantum dot layers each including a quantum dot containing InxGa1-xN (0≦x≦1) and a burying layer burying the quantum dot and containing n-type Inx(GayAl1-y)1-xN (0≦x≦1, 0≦y≦1) are stacked.
A fabrication method for a semiconductor device, comprising:
- forming a drift layer by stacking a plurality of quantum dot layers each including a quantum dot containing InxGa1-xN (0≦x≦1) and a burying layer burying the quantum dot and containing n-type Inx(GayAl1-y)1-xN (0≦x≦1, 0≦S≦1).
Dependencies are inferred from the claim text.