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US 2014/0209860 A1Published application
Light emitting device for improving a light emission efficiency
AssigneeLG Innotek Co., Ltd.
InventorHyo Kun SON
Life of this patent
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Abstract
A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers. The first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may include Al. The second conductive semiconductor layer may have Al content higher than Al content of the first conductive semiconductor layer. The first conductive semiconductor layer may have Al content higher than Al content of the active layer.
Claims20
A light emitting device comprising:
- a first conductive semiconductor layer;
- a second conductive semiconductor layer;
- and
- an active layer interposed between the first and the second conductive semiconductor layers,
- wherein the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer include Al,
- wherein the active layer includes a plurality of barrier layers and a plurality of quantum well layers,
- wherein the second conductive semiconductor layer includes a first layer and a second layer on the first layer and Al content of the first layer is different from Al content of the second layer,
- wherein a thickness of the first conductive semiconductor layer is thicker than that of the second conductive semiconductor layer or the active layer,
- wherein the plurality of quantum well layers include a first layer including Al and a second layer on the first layer,
- wherein a thickness of the second layer of the quantum well layers is thicker than a thickness of the first layer of the quantum well layers, and
- wherein the first layer of the quantum well layers is disposed on at least one of the plurality of barrier layers.
8 more elements
A light emitting device comprising:
- a conductive support member;
- a second conductive semiconductor layer on the conductive support member;
- an active layer on the second conductive semiconductor layer;
- a first conductive semiconductor layer on the active layer;
- and
- an electrode on the first conductive semiconductor layer,
- wherein the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer include Al,
- wherein the active layer includes a plurality of barrier layers and a plurality of quantum well layers,
- wherein the second conductive semiconductor layer includes a first layer and a second layer on the first layer and Al content of the first layer is different from Al content of the second layer,
- wherein a thickness of the first conductive semiconductor layer is thicker than that of the second conductive semiconductor layer or the active layer,
- wherein the quantum well layer includes a first layer including Al and a second layer on the first layer,
- wherein a thickness of the second layer of the quantum well layers is thicker than a thickness of the first layer of the quantum well layers, and
- wherein the first layer of the quantum well layers is disposed on at least one of the barrier layers.
10 more elements
A light emitting device comprising:
- a first conductive semiconductor layer;
- a second conductive semiconductor layer;
- and
- an active layer interposed between the first and the second conductive semiconductor layers,
- wherein the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer include Al,
- wherein the second conductive semiconductor layer has Al content higher than Al content of the first conductive semiconductor layer, and the first conductive semiconductor layer has Al content higher than Al content of the active layer,
- wherein the active layer includes a plurality of barrier layers and a plurality of quantum well layers,
- wherein the quantum well layers have Al content lower than Al content of the barrier layers,
- wherein the second conductive semiconductor layer includes a first layer and a second layer on the first layer and Al content of the first layer is different from Al content of the second layer,
- wherein a thickness of the first conductive semiconductor layer is thicker than that of the second conductive semiconductor layer or the active layer,
- wherein the quantum well layers includes a first layer including Al and a second layer on the first layer, and
- wherein the first layer of the quantum well layers is disposed on at least one of the barrier layers,
- wherein a thickness of the second layer of the quantum well layers is thicker than a thickness of the first layer of the quantum well layers,
- wherein the first layer of the second conductive semiconductor layer includes Al and the second layer of the second conductive semiconductor layer is formed without Al, and wherein the second layer of the quantum well layers is formed without Al.
11 more elements
Dependencies are inferred from the claim text.