Nano-structure semiconductor light emitting device

A nano-structure semiconductor light emitting device comprising:

• a base layer formed of a first conductivity-type semiconductor;
• a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer;
• a plurality of nanocores disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor;
• an active layer and a second conductivity-type semiconductor layer sequentially disposed on surfaces of the plurality of nanocores and positioned above the first insulating layer;
• a second insulating layer disposed on the first insulating layer and having a plurality of second openings surrounding the plurality of nanocores, the active layer and the second conductivity-type semiconductor layer sequentially disposed on the surfaces of the plurality of nanocores;
• and
• an electrode positioned above the second insulating layer and connected to the second conductivity-type semiconductor layer.

A nano-structure semiconductor light emitting device comprising:

• a base layer formed of a first conductivity type semiconductor;
• an insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer;
• a plurality of nanocores formed of the first conductivity-type semiconductor disposed in the exposed regions of the base layer, wherein outer surfaces of the nanocores are stable crystal planes;
• an active layer disposed on the outer surfaces of the plurality of nanocores and positioned above the insulating layer;
• and a second conductivity-type semiconductor layer disposed on a surface of the active layer and positioned above the insulating layer.