Method of manufacture for nitride semiconductor light emitting element, wafer, and nitride semiconductor light emitting element

A method of manufacture for a nitride semiconductor light emitting element,

• the nitride semiconductor light emitting element comprising:
• a monocrystalline substrate;
• an AlN layer provided on a surface of the monocrystalline substrate;
• a first nitride semiconductor layer of a first electrical conductivity type provided on the AlN layer;
• a light emitting layer made of an AlGaN-based material and provided on an opposite side of the first nitride semiconductor layer from the AlN layer;
• and
• a second nitride semiconductor layer of a second electrical conductivity type provided on an opposite side of the light emitting layer from the first nitride semiconductor layer, and
• the method comprising a step of forming the AlN layer on the monocrystalline substrate prepared and set in a reactor and subsequently heating the monocrystalline substrate in a range of 1000° C. to 1150° C. to clean the surface of the monocrystalline substrate,
• wherein the step comprising:
• a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of AlN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate;
• and
• a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer on the surface of the monocrystalline substrate, after the first step.