Nanowire structures having wrap-around contacts

A semiconductor device, comprising:

• a plurality of vertically stacked nanowires disposed above a substrate, each of the nanowires comprising:
• a discrete channel region disposed in the nanowire, the channel region having a length and a perimeter orthogonal to the length;
• a pair of discrete source and drain regions disposed in the nanowire, on either side of the channel region, each of the source and drain regions having a perimeter orthogonal to the length of the channel region;
• a gate electrode stack surrounding the entire perimeter of each of the channel regions;
• and
• a pair of contacts, a first of the pair of contacts completely surrounding the perimeter of each of the source regions, and a second of the pair of contacts completely surrounding the perimeter of each of the drain regions.

A method of fabricating a nanowire semiconductor device, the method comprising:

• forming a nanowire above a substrate;
• forming a channel region in the nanowire, the channel region having a length and a perimeter orthogonal to the length;
• forming a gate electrode stack surrounding the entire perimeter of the channel region;
• forming a pair of source and drain regions in the nanowire, on either side of the channel region, each of the source and drain regions having a perimeter orthogonal to the length of the channel region;
• and
• forming a pair of contacts, a first of the pair of contacts completely surrounding the perimeter of the source region, and a second of the pair of contacts completely surrounding the perimeter of the drain region.