Semiconductor Device Including a Phase Change Material
AssigneeInfineon Technologies AG
InventorsHans-Joachim Schulze, Guenther Ruhl, Hans-Joerg Timme
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Abstract
A semiconductor device includes a transistor including a plurality of transistor cells in a semiconductor body, each transistor cell including a control terminal and first and second load terminals. The semiconductor device further includes a first electrical connection electrically connecting the first load terminals. The semiconductor device further includes a second electrical connection electrically connecting the second load terminals. The transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C.
Claims24
A semiconductor device comprising:
- a transistor, including a plurality of transistor cells in a semiconductor body, each transistor cell including a control terminal and first and second load terminals;
- a first electrical connection electrically connecting the first load terminals;
- a second electrical connection electrically connecting the second load terminals;
- and wherein
- the transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C.
The semiconductor device of claim 6, wherein the phase change material is doped with at least one of C, N, O, In.
A semiconductor device comprising:
- a diode including an anode terminal and a cathode terminal;
- and
- a phase change material being a constituent part of the diode between the anode terminal and the cathode terminal.
A semiconductor power transistor, comprising:
- a plurality of transistor cells in a semiconductor body, each transistor cell including a control terminal and first and second load terminals;
- a first electrical connection electrically connecting the first load terminals;
- a second electrical connection electrically connecting the second load terminals;
- and wherein
- the transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C., wherein the phase change material is part of an electrical connection from a gate terminal to a gate electrode of the semiconductor power transistor.
Dependencies are inferred from the claim text.