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US 2014/0209704 A1Published application
Method of Making a CIG Target by Cold Spraying
AssigneeHanergy Holding Group Ltd.
InventorsJohannes Vlcek, Daniel R. Juliano
Life of this patent
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Abstract
A method of making a sputtering target includes providing a backing structure, and forming a copper indium gallium sputtering target material on the backing structure by cold spraying. The step of cold spraying includes spraying a powder comprising copper, indium and gallium in a process gas stream, and at least one of an average particle size of the powder is at least 35 μm, a velocity of the process gas stream is at least 150 m/s, or a process gas pressure is 20 bar or less.
Claims8
A cold spray deposition system, comprising:
- a powder feed unit;
- a spray gun;
- a powder feed line operatively connecting the powder feed unit to the spray gun;
- a nozzle operatively connected to the spray gun, the nozzle comprising a converging bore in an inlet portion and a straight or diverging bore in an outlet portion;
- a process gas supply conduit operatively connected to the spray gun;
- a process gas heater positioned to heat the process gas in the process gas supply conduit;
- and
- further comprising at least one of:
- (a) the nozzle comprises the straight bore having a substantially constant diameter in the outlet portion;
- (b) the powder feed line extends into the outlet portion of the nozzle;
- or
- (c) the nozzle comprises the converging bore in the inlet portion, the diverging bore in the outlet portion, and a throat portion located between the inlet and the outlet portions, the throat portion having a substantially constant inner diameter bore and a predetermined length.
9 more elements
Dependencies are inferred from the claim text.