Skew elimination and control in a plasma enhanced substrate processing chamber

An apparatus for processing a substrate, comprising:

• a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber;
• a substrate support disposed in the process chamber;
• one or more inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support;
• one or more first electromagnets to form a first static magnetic field having a magnitude of about 2 to about 10 gauss within the processing volume proximate the lid;
• and
• one or more second electromagnets to form a second static magnetic field having a magnitude of about 2 to about 10 gauss within the processing volume proximate and above the substrate support, wherein the one or more first electromagnets and the one or more second electromagnets are configured to form the first and second static magnetic fields substantially vertically in direction and axisymmetrically about a central processing axis of the process chamber.