Methods and apparatus for post-chemical mechanical planarization substrate cleaning

A method for cleaning a substrate, comprising:

• spinning a substrate disposed in a vertical orientation;
• providing a cleaning fluid to a surface of the spinning substrate;
• pressing a first pad against the spinning substrate;
• moving the first pad laterally across the substrate;
• providing a polishing fluid to an exclusion region and/or edge portion of the spinning substrate;
• pressing a second pad against the spinning substrate;
• and
• moving the second pad along the edge of the substrate.

A system for processing a substrate, the system comprising:

• a chemical mechanical planarization (CMP) module;
• and
• a post-CMP substrate cleaning module adapted to receive a substrate after it has been planarized in the CMP module, the post-CMP substrate cleaning module including:
• a housing;
• a substrate holder disposed in the housing, the substrate holder configured to retain a substrate in a substantially vertical orientation, the substrate holder rotatable on a first axis;
• a first pad holder disposed in the housing, the first pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, the first pad holder rotatable on a second axis disposed parallel to the first axis;
• a first actuator operable to move the first pad holder relative to the substrate holder to change a distance defined between the first axis and the second axis;
• and
• a second pad holder disposed in the housing, the second pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, the second pad holder rotatable on a third axis parallel to the first axis and the second axis.