Method for producing monocrystalline n-silicon solar cells, as well as a solar cell produced according to such a method

A monocrystalline n-silicon solar cell, comprising:

• a deposited thin layer, formed of one of aluminum and an aluminum-containing material, on a rear-side of an n-silicon wafer, wherein the thin layer is structured so that openings in the region of future base doping are obtained;
• and
• a structured emitter layer, which is formed by diffusing aluminum into the n-silicon wafer in a further process;
• wherein the monocrystalline n-silicon solar cell includes:
• a p+ emitter on the rear-side of the n-silicon wafer;
• heavily doped n++-base regions near the surface on the rear-side of the n-silicon wafer and spatially separate from the p+ emitter;
• and
• an interdigitated rear-side contact finger structure, which is in conductive connection with the p+-emitter regions and the n++-base regions.