Bipolar diode having an optical quantum structure absorber
OwnerAndreas Paul Schüppeninventor
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Abstract
The invention relates to a novel silicon-based, single-stage solar cell which, instead of converting light in a bulk semiconductor material, generates electrical energy within a very thin quantum structure that is deposited. The layer sequence itself consists of a three-fold hetero structure as an absorber, which is embedded into the space charge region of a pn-junction and is based on quantummechanical effects. Therein, the layer is preferably deposited by a CVD or the like method. High efficiencies of above 30% were initially measured on small samples on silicon.
Claims10
A bipolar semiconductor device for converting light into electrical current or electrical current into light, said device comprising:
- a) a first layer consisting of p-doped semiconductor material with a band gap X,
- b) a second layer consisting of a material with a larger band gap Y and having a thickness such that charge carriers are able to tunnel therethrough,
- c) a third layer consisting of a material with a smaller band gap Z and of a material having a high light absorption,
- d) a fourth layer consisting of a material with a larger band gap Y and having a thickness such that charge carriers are able to tunnel therethrough, and
- e) a fifth layer consisting of a n-doped semiconductor material having a band gap X and is sufficiently thin that incident light can reach the layers of b), c), d), and e).
Dependencies are inferred from the claim text.