Plasma activated deposition of a conformal film on a substrate surface
AssigneeNovellus Systems, Inc.
InventorsAdrien LaVoie, Mark J. Saly, Daniel Moser, Rajesh Odedra, Ravi Konjolia
Life of this patent
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Abstract
An apparatus deposits a film on a substrate including a reaction chamber arranged on a substrate support. An inlet port delivers gas phase reactants to the reaction chamber. A plasma generator provides plasma to the reaction chamber. A controller is configured to flow a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, tris(dimethylamido)silylazide, and bis(tert-butylhydrazido)diethyl silane. The silicon-containing reactant is introduced in vapor phase into the reaction chamber. The controller flows a second reactant in vapor phase into the reaction chamber.
Claims15
An apparatus for depositing a film on a substrate, comprising:
- a reaction chamber including a substrate arranged on a substrate support;
- an inlet port that delivers gas phase reactants to the reaction chamber;
- a plasma generator that provides plasma to the reaction chamber;
- and
- a controller configured to:
- flow a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, tris(dimethylamido)silylazide, and bis(tert-butylhydrazido)diethylsilane, wherein the silicon-containing reactant is introduced in vapor phase into the reaction chamber;
- and
- flow a second reactant in vapor phase into the reaction chamber.
An apparatus for depositing a film on a substrate, comprising:
- a reaction chamber including a substrate arranged on a substrate support;
- an inlet port that delivers gas phase reactants to the reaction chamber;
- a plasma generator that provides plasma to the reaction chamber;
- and
- a controller configured to:
- (a) introduce a silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto a surface of a substrate, wherein the silicon-containing reactant is selected from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido)silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane;
- (b) introduce a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber;
- (c) expose the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film;
- and
- (d) sweep out the second reactant in vapor phase prior to (c).
An apparatus for depositing a film on a substrate, comprising:
- a reaction chamber including a substrate arranged on a substrate support;
- an inlet port that delivers gas phase reactants to the reaction chamber;
- a plasma generator that provides plasma to the reaction chamber;
- and
- a controller configured to:
- (a) introduce a silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto a surface of a substrate, wherein the silicon-containing reactant is selected from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido)silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane;
- (b) introduce a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface;
- (c) exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film;
- and
- (d) exposing the substrate surface to the second reactant after sweeping the silicon-containing reactant out of the reaction chamber but prior to (c).
Dependencies are inferred from the claim text.