Vapor phase growth apparatus and vapor phase growth method

A vapor phase growth method using a vapor phase growth apparatus including,

• a reaction chamber,
• a shower plate disposed in an upper portion of the reaction chamber, the shower plate having first lateral gas flow passages arranged in a first horizontal plane and extending parallel to each other, first longitudinal gas flow passages being connected to the first lateral gas flow passages, the first longitudinal gas flow passages extending in a longitudinal direction, each of the first longitudinal gas flow passages having a first gas ejection hole provided on the reaction chamber side, the shower plate having second lateral gas flow passages arranged in a second horizontal plane upper than the first horizontal plane and extending parallel to each other in the same direction as the first lateral gas flow passages, second longitudinal gas flow passages being connected to the second lateral gas flow passages, the second longitudinal gas flow passages extending in the longitudinal direction through between the first lateral gas flow passages, each of the second longitudinal gas flow passages having a second gas ejection hole provided on the reaction chamber side, the shower plate configured to supply gas into the reaction chamber, and
• a support unit provided below the shower plate in the reaction chamber, the support unit being capable of placing a substrate thereon,
• the method comprising:
• placing a substrate on the support unit;
• heating the substrate;
• ejecting a process gas through the first and second gas ejection holes;
• and
• forming a semiconductor film on a surface of the substrate.