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US 2014/0209014 A1Published application
Method of growing diamond thin film
AssigneeNational Chiao Tung University
InventorsLi CHANG, Yu-Chang CHEN, Jr-Yu CHEN
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Abstract
The present invention is directed to a method of growing thin film diamond. Since there are micro-grooves formed between internal grains of the heterogeneous substrate during lateral epitaxy growth, diamond seeds are allowed to be embedded in the micro-grooves; surface damage caused by scratching method or seeding method also can be prevented. As a result, a continuous diamond thin film with uniform thickness and high quality can be obtained.
Claims23
A growth method of diamond thin film comprising:
- providing a carrier substrate;
- forming a heterogeneous substrate on the carrier substrate via epitaxial growth, wherein the heterogeneous substrate comprises multiple grains and there are multiple irregular micro-grooves formed at junction between the multiple grains on a upper surface of the heterogeneous substrate;
- providing multiple diamond seeds embedded into the multiple micro-grooves;
- and
- depositing a diamond thin film on the upper surface of the heterogeneous substrate.
2 more elements
Dependencies are inferred from the claim text.