Crystal growth method for nitride semiconductor having a multiquantum well structure

Abstract

A crystal growth method for nitride semiconductors, including the steps of growing a first semiconductor layer containing InxGa1-xN (0<x≦1) on a substrate, with the use of a first carrier gas formed with an inert gas; growing a second semiconductor layer containing InyGa1-yN (0≦y<1, y<x) on the first semiconductor layer, with the use of a second carrier gas containing the inert gas and H2 gas, an amount of the H2 gas being smaller than an amount of the inert gas; and growing a third semiconductor layer containing InzGa1-zN (0≦z<1, z<x) on the second semiconductor layer, with the use of a third carrier gas containing the inert gas and H2 gas, an amount of the H2 gas in the third carrier gas being a smaller than the amount of H2 gas in the second carrier gas.

Dependencies are inferred from the claim text.