Single-crystal substrate, group-iii nitride crystal obtained using the same, and process for producing group-iii nitride crystal
AssigneeMitsubishi Chemical Corporation
InventorsKenji FUJITO, Yasuhiro Uchiyama
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Abstract
Provided is a base substrate with which a Group-III nitride crystal having a large area and a large thickness can be grown while inhibiting crack generation. A single-crystal substrate for use in growing a Group-III nitride crystal thereon, which satisfies the following expression (1), wherein Z1 (μm) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2 (μm) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single-crystal substrate: −40<Z2/Z1<−1: Expression (1).
Claims19
1-10. (canceled)
A method for producing a light-emitting semiconductor element or a semiconductor device, which comprises growing a Group-III nitride crystal on a growth surface of a single-crystal substrate, wherein the single-crystal substrate satisfies the following expressions (1) and (2) and has a back surface of concave shape, wherein Z1 (μm) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2 (μm) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single crystal substrate:
- Z1>0 Expression (1)
- Z2<0 Expression (2).
A method for producing a Group-III nitride crystal, which comprises growing a Group-III nitride crystal on a growth surface of a single-crystal substrate, wherein the single-crystal substrate satisfies the following expressions (1) and (2) and has a back surface of concave shape, wherein Z1 (μm) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2 (μm) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single crystal substrate:
- Z1>0 Expression (1)
- Z2<0 Expression (2).
Dependencies are inferred from the claim text.