# US 2014/0208174 A1 · Storage control system with data management mechanism and method of operation thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0208174 A1 - Document ID: US20140208174A1 - Status: Published application - Kind: A1 - Application number: 13/746,542 - Filed: 2013-01-22 - Published: 2014-07-24 - Earliest claimed: 2013-01-22 - Assignees: Smart Storage Systems, Inc. - Applicants: Smart Storage Systems, Inc. - Inventors: Robert W. Ellis; James Fitzpatrick; Mark Dancho; Michelle Martin - Web page: https://patentgrep.com/patent/US20140208174A1 ## CPC - G11C 29/50004: {of threshold voltage} - G06F 11/1048: {using arrangements adapted for a specific error detection or correction feature} - G11C 16/26: Sensing or reading circuits; Data output circuits - G11C 16/04: using variable threshold transistors, e.g. FAMOS - G11C 29/48: Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths - G11C 29/50: Marginal testing, e.g. race, voltage or current testing - G11C 29/56: External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor - G11C: STATIC STORES (semiconductor memory devices H10B) - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) ## Abstract A method of operation of a storage control system includes: determining a bit error rate of a page; calculating a slope based on the bit error rate; and adjusting a threshold voltage for the page based on the slope for reading a memory device. ## Claims ### Claim 1 A method of operation of a storage control system comprising: determining a bit error rate of a page; calculating a slope based on the bit error rate; and adjusting a threshold voltage for the page based on the slope for reading a memory device. ### Claim 2 (depends on 1) The method as claimed in claim 1 wherein adjusting the threshold voltage includes adjusting the threshold voltage with a threshold change value based on the slope and an age of the erase block. ### Claim 3 (depends on 1) The method as claimed in claim 1 further comprising estimating a target bit error rate for adjustment of the threshold voltage. ### Claim 4 (depends on 1) The method as claimed in claim 1 wherein adjusting the threshold voltage includes adjusting the threshold voltage based on where the page is located within an erase block. ### Claim 5 (depends on 1) The method as claimed in claim 1 wherein: determining the bit error rate includes determining bit error rates for the slope based on a beginning page and an ending page; and further comprising: estimating an age of an erase block based on a change of a difference in the bit error rates. ### Claim 6 A method of operation of a storage control system comprising: determining a bit error rate of a page in an erase block; calculating a slope based on the bit error rate; and adjusting a threshold voltage for the page based on the slope for reading a memory device. ### Claim 7 (depends on 6) The method as claimed in claim 6 wherein adjusting the threshold voltage includes adjusting the threshold voltage with a threshold change value based on the slope, a constant, and an age of the erase block. ### Claim 8 (depends on 6) The method as claimed in claim 6 further comprising estimating a target bit error rate by sampling a mid-point page for adjustment of the threshold voltage. ### Claim 9 (depends on 6) The method as claimed in claim 6 wherein adjusting the threshold voltage includes increasing the threshold voltage by a threshold change value when reading a beginning page and decreasing the threshold voltage by the threshold change value when reading an ending page. ### Claim 10 (depends on 6) The method as claimed in claim 6 wherein: determining the bit error rate includes determining bit error rates for the slope based on a beginning page and an ending page; and further comprising: estimating an age of an erase block based on a change of a difference in the bit error rates and a change in the threshold voltage. ### Claim 11 A storage control system comprising: a measurement module for determining a bit error rate of a page; a calculation module, coupled to the measurement module, for calculating a slope based on the bit error rate; and an adjustment module, coupled to the calculation module, for adjusting a threshold voltage for the page based on the slope for reading a memory device. ### Claim 12 (depends on 11) The system as claimed in claim 11 wherein the adjustment module is for adjusting the threshold voltage with a threshold change value based on the slope and an age of the erase block. ### Claim 13 (depends on 11) The system as claimed in claim 11 further comprising a rate estimation module, coupled to the calculation module, for estimating a target bit error rate for adjustment of the threshold voltage. ### Claim 14 (depends on 11) The system as claimed in claim 11 wherein the adjustment module is for adjusting the threshold voltage based on where the page is located within an erase block. ### Claim 15 (depends on 11) The system as claimed in claim 11 wherein: the measurement module is for determining bit error rates for the slope based on a beginning page and an ending page; and further comprising: an age estimation module, coupled to the measurement module, for estimating an age of an erase block based on a change of a difference in the bit error rates. ### Claim 16 (depends on 11) The system as claimed in claim 11 wherein the measurement module is for determining the bit error rate of the page in an erase block. ### Claim 17 (depends on 16) The system as claimed in claim 16 wherein the adjustment module is for adjusting the threshold voltage with a threshold change value based on the slope, a constant, and an age of the erase block. ### Claim 18 (depends on 16) The system as claimed in claim 16 further comprising a rate estimation module, coupled to the calculation module, for estimating a target bit error rate by sampling a mid-point page for adjustment of the threshold voltage. ### Claim 19 (depends on 16) The system as claimed in claim 16 wherein the adjustment module is for increasing the threshold voltage by a threshold change value when reading a beginning page and decreasing the threshold voltage by the threshold change value when reading an ending page. ### Claim 20 (depends on 16) The system as claimed in claim 16 wherein: the measurement module is for determining bit error rates for the slope based on a beginning page and an ending page; and further comprising: an age estimation module, coupled to the measurement module, for estimating an age of an erase block based on a change of a difference in the bit error rates and a change in the threshold voltage.