# US 2014/0197902 A1 · Diplexer design using through glass via technology > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197902 A1 - Document ID: US20140197902A1 - Status: Published application - Kind: A1 - Application number: 13/798,733 - Filed: 2013-03-13 - Published: 2014-07-17 - Earliest claimed: 2013-01-11 - Assignees: QUALCOMM Incorporated - Applicants: Qualcomm Incorporated - Inventors: Chengjie Zuo; Jonghae Kim; Mario Francisco Velez; Je-Hsiung Lan; Daeik D. Kim; Changhan Yun; David F. Berdy; Robert P. Mikulka; Matthew M. Nowak; Xiangdong Zhang; Puay H. See - Web page: https://patentgrep.com/patent/US20140197902A1 ## CPC - H03H 7/461: {particularly adapted for use in common antenna systems} - H03H 3/00: Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators - H03H 7/463: {Duplexers} - H05K 1/165: {incorporating printed inductors} - H10W 44/00: Electrical arrangements for controlling or matching impedance - H01F 2017/0026: {Multilayer LC-filter} - H01F 2017/004: {with the coil helically wound around an axis without a core} - H03H 7/1758: {Series LC in shunt or branch path (H03H7/1791 takes precedence)} - H03H 7/1766: {Parallel LC in series path (H03H7/1783 takes precedence)} - H03H 7/1791: {Combined LC in shunt or branch path} - H03H 2001/0021: {Constructional details} - H05K 1/0233: {Filters, inductors or a magnetic substance} - H05K 1/0306: {Inorganic insulating substrates, e.g. ceramic, glass} - H05K 2201/09627: Special connections between adjacent vias, not for grounding vias - H05K 2201/09672: Superposed layout, i.e. in different planes - H05K 2201/10015: Non-printed capacitor - H05K 2201/10098: Components for radio transmission, e.g. radio frequency identification [RFID] tag, printed or non-printed antennas - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H10W 20/496: {Capacitor integral with wiring layers} - H10W 20/497: {Inductive arrangements or effects of, or between, wiring layers} - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H10W 70/635: {Through-vias} - H10W 70/692: Ceramics or glasses - Y10T 29/49128: Assembling formed circuit to base - H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P) - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A diplexer includes a substrate having a set of through substrate vias. The diplexer also includes a first set of traces on a first surface of the substrate. The first traces are coupled to the through substrate vias. The diplexer further includes a second set of traces on a second surface of the substrate that is opposite the first surface. The second traces are coupled to opposite ends of the set of through substrate vias. The through substrate vias and the traces also operate as a 3D inductor. The diplexer also includes a capacitor supported by the substrate. ## Claims ### Claim 1 A diplexer, comprising: a substrate having a plurality of through substrate vias; a first plurality of traces on a first surface of the substrate, coupled to the plurality of through substrate vias; a second plurality of traces on a second surface of the substrate, opposite the first surface, coupled to opposite ends of the plurality of through substrate vias, the plurality of through substrate vias and traces operating as a 3D inductor; and a capacitor supported by the substrate. ### Claim 2 (depends on 1) The diplexer of claim 1, in which the capacitor is supported by only one side of the substrate. ### Claim 3 (depends on 1) The diplexer of claim 1, in which the substrate comprises glass, air, quartz, sapphire or high-resistivity silicon. ### Claim 4 (depends on 1) The diplexer of claim 1, in which the capacitor comprises conductive layers on opposing sides, the conductive layers having a thickness of approximately 1 um to 5 um. ### Claim 5 (depends on 1) The diplexer of claim 1, in which the capacitor comprises a layered metal-insulator-metal capacitor structure. ### Claim 6 (depends on 1) The diplexer of claim 1, in which the diplexer has a rejection greater than 30 dB at a frequency of 5.5 GHz. ### Claim 7 (depends on 1) The diplexer of claim 1 integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit. ### Claim 8 A diplexer, comprising: a first port; a second port; a third port; a low pass filter between two of the first port, the second port and the third port: and a second pass filter between two other of the first port, the second port and the third port, the second pass filter comprising a band pass filter or a high pass filter. ### Claim 9 (depends on 8) The diplexer of claim 8, further comprising a substrate supporting the first port, the second port and the third port, the substrate comprising glass, air, quartz, sapphire or high-resistivity silicon. ### Claim 10 (depends on 9) The diplexer of claim 9, in which the lose pass filter and the second pass filter each comprise a capacitor or an inductor. ### Claim 11 (depends on 10) The diplexer of claim 10, in which the inductor comprises a 3D inductor. ### Claim 12 (depends on 10) The diplexer of claim 10, in which the capacitor comprises conductive layers on opposing sides, the conductive layers having a thickness of approximately 1 to 5 um. ### Claim 13 (depends on 10) The diplexer of claim 10, in which the capacitor is supported by only one side of the substrate. ### Claim 14 (depends on 8) The diplexer of claim 8, in which the low pass filter is a filter configured to trap frequencies from the second port, and the second pass filter is a filter configured to trap frequencies from the first port. ### Claim 15 (depends on 8) The diplexer of claim 8, in which the second pass filter is a band pass filter, and the diplexer has a rejection greater than 30 dB at a frequency of 5.5 GHz. ### Claim 16 (depends on 8) The diplexer of claim 8 integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit. ### Claim 17 A method of fabricating a diplexer, comprising: forming a plurality of through substrate vias in a substrate; depositing a first plurality of traces on a first surface of the substrate; depositing a second plurality of traces on a second surface of the substrate; coupling the first plurality of traces to first sides of the plurality of through substrate vias; coupling the second plurality of traces to second sides of the plurality of through substrate vias to form a serpentine 3D inductor; and forming a capacitor on the substrate. ### Claim 18 (depends on 17) The method of claim 17, further comprising integrating the diplexer into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit. ### Claim 19 An diplexer comprising: a substrate having a plurality of through substrate vias; a first plurality of traces on a first surface of the substrate; first means for coupling the plurality of through substrate vias on the first surface of the substrate; second means for coupling opposite ends of the plurality of through substrate vias on a second surface of the substrate opposite the first surface, the first plurality of traces and the first means for coupling and the second means for coupling operating as a 3D inductor; and means for storing charge supported by the substrate. ### Claim 20 (depends on 19) The diplexer of claim 19, integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit. ### Claim 21 A method of fabricating a diplexer, comprising: the step of forming a plurality of through substrate vias in a substrate; the step of depositing a first plurality of traces on a first surface of the substrate; the step of depositing a second plurality of traces on a second surface of the substrate; the step of coupling the first plurality of traces to first sides of the plurality of through substrate vias; the step of coupling the second plurality of traces to second sides of the plurality of through substrate vias to form a serpentine 3D inductor; and the step of forming a capacitor on the substrate. ### Claim 22 (depends on 21) The method of claim 21, further comprising the step of integrating the diplexer into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.