# US 2014/0197896 A1 · Electromagnetic wave generation device and detection device

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- Number: US 2014/0197896 A1
- Document ID: US20140197896A1
- Status: Published application
- Kind: A1
- Application number: 14/155,033
- Filed: 2014-01-14
- Published: 2014-07-17
- Earliest claimed: 2013-01-16
- Assignees: Canon Kabushiki Kaisha
- Applicants: Canon Kabushiki Kaisha
- Inventors: Toshihiko Ouchi; Ryota Sekiguchi
- Web page: https://patentgrep.com/patent/US20140197896A1

## CPC

- H03B 7/00: Generation of oscillations using active element having a negative resistance between two of its electrodes (H03B9/00 takes precedence)
- G01J 1/44: Electric circuits {(for command of an exposure part G03B7/02)}
- H01S 1/02: solid
- H03B 7/08: being a tunnel diode
- H03B 17/00: Generation of oscillations using radiation source and detector, e.g. with interposed variable obturator
- H03C 7/00: Modulating electromagnetic waves (devices or arrangements for the modulation of light G02F1/00)
- H03C 7/025: {using semiconductor devices}
- H03B 2200/0084: dedicated to Terahertz frequencies
- H03B: GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS (generators adapted for electrophonic musical instruments G10H; masers or lasers H01S; generation of oscillations in plasma H05H)
- G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N)
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H03C: MODULATION (masers or lasers H01S; coding, decoding or code conversion H03M)

## Abstract

The invention provides an electromagnetic wave generation device. The device includes a substrate provided with a terahertz wave oscillation section including a resonant tunneling diode structure, a two-dimensional electron layer having a semiconductor heterojunction structure, and a transistor section including a source electrode and a drain electrode provided at end portions of the two-dimensional electron layer and a gate electrode provided above the two-dimensional electron layer. The terahertz wave output of the terahertz wave oscillation section changes distribution of electrons in the two-dimensional electron layer.

## Claims

### Claim 1

An electromagnetic wave generation device, the device comprising a substrate, the substrate being provided with a terahertz wave oscillation section including a resonant tunneling diode structure,
a two-dimensional electron layer having a semiconductor heterojunction structure, and
a transistor section including a source electrode and a drain electrode provided at end portions of the two-dimensional electron layer and a gate electrode provided above the two-dimensional electron layer,
wherein a terahertz wave output of the terahertz wave oscillation section changes distribution of electrons in the two-dimensional electron layer.

### Claim 2 (depends on 1)

The electromagnetic wave generation device according to claim 1, wherein the terahertz wave oscillation section is arranged such that a terahertz wave from the terahertz wave oscillation section enters the two-dimensional electron layer.

### Claim 3 (depends on 1)

The electromagnetic wave generation device according to claim 1, wherein the terahertz wave oscillation section and the transistor section are arranged on two different surfaces of the substrate at opposite positions.

### Claim 4 (depends on 1)

The electromagnetic wave generation device according to claim 1, wherein the terahertz wave oscillation section includes a resonator, and
the transistor section is connected to the resonator with regard to alternating current.

### Claim 5 (depends on 1)

The electromagnetic wave generation device according to claim 1, wherein electrical wiring to propagate a terahertz wave from the terahertz wave oscillation section is connected to the transistor section with regard to alternating current.

### Claim 6 (depends on 3)

The electromagnetic wave generation device according to claim 3, wherein a terahertz wave from the terahertz wave oscillation section propagates inside the substrate.

### Claim 7 (depends on 4)

The electromagnetic wave generation device according to claim 4, wherein the terahertz wave oscillation section and the transistor section are in conduction at a frequency band of a terahertz wave from an oscillation of the terahertz wave oscillation section, and are isolated with regard to direct current.

### Claim 8 (depends on 1)

The electromagnetic wave generation device according to claim 1, wherein a modulation signal is applied to the transistor section to output a terahertz wave modulation signal.

### Claim 9

An electromagnetic wave detection device, the device comprising a substrate, the substrate being provided with a terahertz wave oscillation section including a resonant tunneling diode structure,
a two-dimensional electron layer having a semiconductor heterojunction structure, and
a transistor section including a source electrode and a drain electrode provided at end portions of the two-dimensional electron layer and a gate electrode provided above the two-dimensional electron layer,
wherein, upon irradiation of the electromagnetic wave detection device with an external terahertz wave, the transistor section outputs a signal corresponding to an intensity of the terahertz wave.

### Claim 10 (depends on 9)

The electromagnetic wave detection device according to claim 9, wherein a terahertz wave from the terahertz wave oscillation section is allowed to enter the two-dimensional electron layer, so that the signal output by the transistor section is a mixing signal with an oscillation frequency of the terahertz wave from the terahertz wave oscillation section.

### Claim 11 (depends on 1)

An apparatus comprising the electromagnetic wave generation device according to claim 1 and
a power source configured to drive the electromagnetic wave generation device, the apparatus being configured to transmit a terahertz wave signal.

### Claim 12 (depends on 9)

An apparatus comprising the electromagnetic wave detection device according to claim 9 and
a power source configured to drive the electromagnetic wave detection device,
the apparatus being configured to transmit a terahertz wave signal.
