# US 2014/0197891 A1 · Integrated circuit chip temperature sensor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197891 A1 - Document ID: US20140197891A1 - Status: Published application - Kind: A1 - Application number: 13/743,570 - Filed: 2013-01-17 - Published: 2014-07-17 - Earliest claimed: 2013-01-17 - Assignees: Raytheon Company - Applicants: Raytheon Company - Inventors: Jon Mooney; Bryan G. Fast; David D. Heston - Web page: https://patentgrep.com/patent/US20140197891A1 ## CPC - H03F 1/30: Modifications of amplifiers to reduce influence of variations of temperature or supply voltage {or other physical parameters (in differential amplifiers H03F3/45479)} - H10D 89/60: Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] - H10W 40/00: Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60) - H03F: AMPLIFIERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A temperature control system having: a resistor formed in a region of a semiconductor, such resistor having a pair of spaced electrodes in ohmic contact with the semiconductor; at least one device formed in another region of the semiconductor thermally proximate the resistor formed region, such device generating heat in the semiconductor; and circuitry, including a reference connected to one of the pair of electrodes, for operating the resistor in saturation and for sensing variation in the resistor in response to the heat generated by the device and for controlling the heat generated by the device in the semiconductor in response to the sensed variation. ## Claims ### Claim 1 A temperature control system, comprising: a semiconductor; a resistor formed in a region of the semiconductor, such resistor having a pair of spaced electrodes in ohmic contact with the semiconductor; at least one device formed in another region of the semiconductor thermally proximate the resistor formed region, such device generating heat in the semiconductor; circuitry, including a reference connected to one of the pair of electrodes, for operating the resistor in saturation and for sensing variation in the resistor in response to the heat generated by the device and for controlling the heat generated by the device in the semiconductor in response to the sensed variation. ### Claim 2 (depends on 1) The temperature control circuitry recited in claim 1 wherein the region between the pair of electrodes is doped semiconductor. ### Claim 3 (depends on 1) The temperature control circuitry recited in claim 1 wherein the reference is a reference voltage and wherein the circuitry senses variations in current through the resistor in response to variations in the temperature of the semiconductor. ### Claim 4 (depends on 1) The temperature control circuitry recited in claim 1 wherein the reference is a reference current and wherein the circuitry senses variations in voltage at said one of the electrodes in response to variations in the temperature of the semiconductor. ### Claim 5 (depends on 1) The temperature control circuitry recited in claim 1 wherein the device is a transistor amplifier. ### Claim 6 (depends on 3) The temperature control circuitry recited in claim 3 wherein the region between the pair of electrodes is doped semiconductor. ### Claim 7 (depends on 4) The temperature control circuitry recited in claim 4 wherein the region between the pair of electrodes is doped semiconductor. ### Claim 8 (depends on 5) The temperature control circuitry recited in claim 5 wherein the region between the pair of electrodes is doped semiconductor. ### Claim 9 A temperature control system, comprising: a semiconductor; a resistor formed in a region of the semiconductor, such resistor having a pair of spaced electrodes in ohmic contact with the semiconductor; a transistor formed in another region of the semiconductor thermally proximate the resistor formed region, such device generating heat in the semiconductor; circuitry coupled to the pair of electrodes, for operating the resistor in saturation and for sensing variation in current through, or voltage between, the pair of spaced electrodes of the saturation operated resistor and for controlling the temperature of the semiconductor in response to the sensed variation. ### Claim 10 (depends on 3) The temperature control circuitry recited in claim 3 wherein the region between the pair of electrodes is doped semiconductor ### Claim 11 (depends on 9) The temperature control circuitry recited in claim 9 wherein the reference is a reference voltage and wherein the circuitry senses variations in current through the resistor in response to variations in the temperature of the semiconductor. ### Claim 12 (depends on 9) The temperature control circuitry recited in claim 9 wherein the reference is a reference current and wherein the circuitry senses variations in voltage at one of the electrodes in response to variations in the temperature of the semiconductor. ### Claim 13 (depends on 9) The temperature control circuitry recited in claim 9 wherein the transistor is arranged as an amplifier. ### Claim 14 (depends on 11) The temperature control circuitry recited in claim 11 wherein the region between the pair of electrodes is doped semiconductor. ### Claim 15 (depends on 12) The temperature control circuitry recited in claim 12 wherein the region between the pair of electrodes is doped semiconductor. ### Claim 16 (depends on 13) The temperature control circuitry recited in claim 13 wherein the region between the pair of electrodes is doped semiconductor. ### Claim 17 (depends on 1) The temperature control circuitry recited in claim 1 wherein the resistor and device are formed on a III-V semiconductor and wherein the circuitry is formed on a different semiconductor. ### Claim 18 (depends on 9) The temperature control circuitry recited in claim 9 wherein the resistor and device are formed on a semiconductor and wherein the circuitry is formed on a different semiconductor. ### Claim 19 (depends on 17) The temperature control circuitry recited in claim 17 wherein the region between the pair of electrodes is doped semiconductor. ### Claim 20 (depends on 18) The temperature control circuitry recited in claim 18 wherein the region between the pair of electrodes is doped semiconductor.