# US 2014/0197882 A1 · Switching device with resistive divider > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197882 A1 - Document ID: US20140197882A1 - Status: Published application - Kind: A1 - Application number: 13/742,086 - Filed: 2013-01-15 - Published: 2014-07-17 - Earliest claimed: 2013-01-15 - Assignees: TriQuint Semiconductor, Inc. - Inventors: Ravishankar Prabhakar, III; James P. Furino, JR. - Web page: https://patentgrep.com/patent/US20140197882A1 ## CPC - H10D 84/817: {Combinations of field-effect devices and resistors only} - H10W 72/00: Interconnections or connectors in packages - H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Embodiments provide a switching device including one or more field-effect transistors (FETs). In embodiments, a resistive divider comprising a first resistor and a second resistor may be coupled with the FET at a position electrically between a gate terminal of the FET and a body terminal of the FET. ## Claims ### Claim 1 A circuit comprising: a metal-oxide-semiconductor field-effect transistor (MOSFET) including a source terminal, a gate terminal, a drain terminal, and a body terminal; a resistive divider having a first resistor and a second resistor and coupled with and between the gate terminal and the body terminal; and a DC voltage source coupled with the gate terminal and the resistive divider, the DC voltage source configured to provide a constant DC voltage to the gate terminal and the resistive divider. ### Claim 2 (depends on 1) The circuit of claim 1, wherein the MOSFET is an n-type MOSFET. ### Claim 3 (depends on 1) The circuit of claim 1, wherein the MOSFET is a p-type MOSFET. ### Claim 4 (depends on 1) The circuit of claim 1, wherein the first resistor comprises a first connection coupled with a ground, and a second connection coupled with the body terminal. ### Claim 5 (depends on 4) The circuit of claim 4, wherein the second resistor comprises a first connection coupled with the body terminal and a second connection coupled with the gate terminal. ### Claim 6 (depends on 1) The circuit of claim 1, wherein the resistive divider is configured to bias a voltage of the body terminal between the DC voltage of the gate terminal and a ground voltage when the DC voltage of the gate terminal is not equal to the ground voltage. ### Claim 7 (depends on 6) The circuit of claim 6, wherein the voltage of the body terminal is a predetermined voltage based at least in part on a resistance of the first resistor and a resistance of the second resistor. ### Claim 8 (depends on 7) The circuit of claim 7, wherein the DC voltage of the gate terminal is positive with respect to the ground voltage. ### Claim 9 (depends on 7) The circuit of claim 7, wherein the DC voltage of the gate terminal is negative with respect to the ground voltage. ### Claim 10 (depends on 1) The circuit of claim 1, further comprising: a switch including the MOSFET and the resistive divider; and a radio frequency (RF) front end, an RF transmitter, or a power convertor including the switch. ### Claim 11 A circuit comprising: a DC power source configured to provide a constant DC voltage; a ground source configured to provide a ground voltage; and one or more unit cells coupled with the DC power source and the ground source, a unit cell of the one or more unit cells including: a metal-oxide-semiconductor field-effect transistor (MOSFET) having a body terminal, a gate terminal coupled with the DC power source such that the DC power source is configured to provide the DC voltage to the gate terminal, a source terminal, and a drain terminal; and a resistive divider coupled with the DC power source such that the DC power source is configured to provide the DC voltage to the resistive divider, the resistive divider comprising a first resistor and a second resistor and configured to bias a voltage of the body terminal between the DC voltage and the ground voltage when the DC voltage is not equal to the ground voltage. ### Claim 12 (depends on 11) The circuit of claim 11, wherein the MOSFET is a p-type MOSFET. ### Claim 13 (depends on 11) The circuit of claim 11, wherein the MOSFET is an n-type MOSFET. ### Claim 14 (depends on 11) The circuit of claim 11, wherein the first resistor comprises a first connection coupled with the ground source, and a second connection coupled with the body terminal. ### Claim 15 (depends on 11) The circuit of claim 11, wherein the second resistor comprises a first connection coupled with the body terminal and a second connection coupled with the gate terminal. ### Claim 16 (depends on 11) The circuit of claim 11, wherein the resistive divider is coupled with and between the gate terminal and the body terminal. ### Claim 17 (depends on 16) The circuit of claim 16, wherein the voltage of the body terminal is a predetermined voltage based at least in part on a resistance of the resistive divider. ### Claim 18 (depends on 17) The circuit of claim 17, wherein the DC voltage is positive with respect to the ground voltage. ### Claim 19 (depends on 17) The switch of claim 17, wherein the DC voltage is negative with respect to the ground voltage. ### Claim 20 A method comprising: coupling a metal-oxide-semiconductor field-effect transistor (MOSFET) with a DC power source and a ground source, the MOSFET comprising a drain terminal, a body terminal, a source terminal, and a gate terminal; and coupling the body terminal and the gate terminal of the MOSFET with the resistive divider such that the resistive divider is positioned between the body terminal and the gate terminal; wherein the resistance of the first resistor and the resistance of the second resistor are based at least in part on a desired voltage of the body terminal when the gate terminal is at a constant DC gate voltage provided by the DC power source, wherein the DC gate voltage is not equal to a ground voltage of the ground source. ### Claim 21 (depends on 20) The method of claim 20, wherein the MOSFET is an n-type MOSFET. ### Claim 22 (depends on 20) The method of claim 20, wherein the MOSFET is a p-type MOSFET. ### Claim 23 (depends on 20) The method of claim 20, further comprising coupling a first connection of the first resistor with the ground source, and coupling a second connection of the first resistor with the body terminal. ### Claim 24 (depends on 20) The method of claim 20, further comprising coupling a first terminal of the second resistor with the gate terminal, and coupling a second terminal of the second resistor with the body terminal. ### Claim 25 (depends on 20) The method of claim 20, wherein the desired voltage of the body terminal is between the DC gate voltage and the ground voltage. ### Claim 26 (depends on 25) The method of claim 25, wherein the DC gate voltage is positive with respect to the ground voltage. ### Claim 27 (depends on 25) The method of claim 25, wherein the DC gate voltage is negative with respect to the ground voltage.