# US 2014/0197877 A1 · System for a contactless control of a field effect transistor

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- Number: US 2014/0197877 A1
- Document ID: US20140197877A1
- Status: Published application
- Kind: A1
- Application number: 14/238,846
- Filed: 2012-07-31
- Published: 2014-07-17
- Earliest claimed: 2011-08-16
- Inventors: Erez Halahmi
- Web page: https://patentgrep.com/patent/US20140197877A1

## CPC

- H03K 17/94: characterised by the way in which the control signals are generated
- G01N 27/414: Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The invention stems from the realization that it is possible to control the electric field in the gate region of a field effect transistor (MOS, FET etc.) without changing the net charge of the gate electrode or without resorting to electrical conduction. According to an aspect of the invention, the electric field is changed by modifying the charge distribution within the gate electrode without materially adding or subtracting charge carriers to it or changing its net charge. This is achieved by displacing one or more sources of electric field, for example free charges, or conductive or non-conductive surface charges in the proximity of the gate electrode. By electric induction, the electric field produce a separation of charges in the gate electrode and an alteration in the conduction state of the FET transistor.

## Claims

### Claim 1

A method for controlling a Field Effect Transistor having an active region, comprising displacing free charges in an evacuated space in the proximity of the active region of the Transistor whereby the free charges change the electric field in the active region and modify a voltage on the transistor's terminals and/or a current flowing through the transistor.

### Claim 2

The method of the preceding claim, whereby the free charges are pre-loaded in an evacuated vessel bounded by walls on which the free charges scatter at least partially elastically.

### Claim 3

The method of the preceding claim, wherein the free charges are electrons and the evacuated vessel has walls exhibiting negative electron affinity of 1.5 V or higher.

### Claim 4

The method of the preceding claim, wherein the evacuated vessel has walls of polyethylene or parylene or activated SiO2.

### Claim 5

A method of interconnecting two electronic devices, in which one electronic device has a Field Effect Transistor as input that is controlled by the other electronic device by one of the methods of the preceding claims.

### Claim 6

A device for controlling a Field Effect Transistor having an active region comprising, an evacuated vessel having two extremities, preloaded with free charges and having walls on which the free charges can scatter at least partially elastically, the Field Effect Transistor being in proximity with one extremity, and the other extremity having transmitter means to accelerate the free charges towards the Field Effect Transistor, whereby the free charges change the electric field in the active region and modify a voltage on the transistor's terminals and/or a current flowing through the transistor.

### Claim 7

The device of the preceding claim, wherein the free charges are electrons and the evacuated vessel has walls exhibiting negative electron affinity of 1.5 eV or higher.

### Claim 8

The device of the preceding claim, wherein the evacuated vessel has walls of polyethylene or parylene or activated SiO2.