# US 2014/0197713 A1 · Out-of-Plane Spacer Defined Electrode

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- Number: US 2014/0197713 A1
- Document ID: US20140197713A1
- Status: Published application
- Kind: A1
- Application number: 14/217,956
- Filed: 2014-03-18
- Published: 2014-07-17
- Earliest claimed: 2011-04-14
- Assignees: Robert Bosch GmbH
- Applicants: Robert Bosch GmbH
- Inventors: Andrew B. Graham; Gary Yama; Gary O'Brien
- Web page: https://patentgrep.com/patent/US20140197713A1

## CPC

- B81B 3/0021: {Transducers for transforming electrical into mechanical energy or vice versa (dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00)}
- B81C 1/00158: {Diaphragms, membranes (manufacture process for semi-permeable inorganic membranes B01D67/0039)}
- B81C 1/00301: {Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias}
- B81B 2203/0127: Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
- B81B 2207/095: through the lid
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)

## Abstract

In one embodiment, a method of forming an out-of-plane electrode includes providing an oxide layer above an upper surface of a device layer, providing a first cap layer portion above an upper surface of the oxide layer, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the first material portion, vapor releasing a portion of the oxide layer, depositing a third cap layer portion above the second cap layer portion, etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion, and depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define out-of-plane electrode.

## Claims

### Claim 1

A device with an out-of-plane electrode comprising:
a device layer positioned above a handle layer;
a cap layer having a first cap layer portion spaced apart from an upper surface of the device layer; and
an out-of-plane electrode defined within the first cap layer portion by a spacer.

### Claim 2 (depends on 1)

The device of claim 1, wherein the cap layer is an epitaxially deposited cap layer.

### Claim 3 (depends on 1)

The device of claim 1, wherein the spacer comprises silicon nitride.

### Claim 4 (depends on 3)

The device of claim 3, wherein the spacer comprises:
a first silicon nitride portion extending upwardly from a lower surface of the cap layer;
a second silicon nitride portion extending downwardly from an upper surface of the cap layer; and
an etch stop portion located between the first silicon nitride portion and the second silicon nitride portion.

### Claim 5 (depends on 1)

The device of claim 1, further comprising:
an oxide layer portion located between a second cap layer portion and the upper surface of the device layer; and
an etch stop extending downwardly from within the cap layer and defining a boundary of the oxide layer portion.

### Claim 6 (depends on 5)

The device of claim 5, wherein the spacer comprises:
a first silicon nitride portion extending upwardly from a lower surface of the cap layer;
a second silicon nitride portion extending downwardly from an upper surface of the cap layer; and
an etch stop portion located between the first silicon nitride portion and the second silicon nitride portion.

### Claim 7 (depends on 5)

The device of claim 5, further comprising:
a buried oxide layer portion located between a lower surface of the device layer and an upper surface of a handle layer; and
an etch stop extending downwardly from the upper surface of the device layer and defining a boundary of the buried oxide layer portion.