# US 2014/0197537 A1 · Void-Free Metallic Filled High Aspect Ratio Openings

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- Number: US 2014/0197537 A1
- Document ID: US20140197537A1
- Status: Published application
- Kind: A1
- Application number: 14/164,465
- Filed: 2014-01-27
- Published: 2014-07-17
- Earliest claimed: 2001-03-30
- Inventors: Uri Cohen
- Web page: https://patentgrep.com/patent/US20140197537A1

## CPC

- C25D 5/026: {using locally applied jets of electrolyte}
- C25D 5/022: {using masking means}
- C25D 5/028: {one side electroplating, e.g. substrate conveyed in a bath with inhibited background plating}
- C25D 5/08: Electroplating with moving electrolyte e.g. jet electroplating {(using locally applied jets of electrolyte C25D5/026)}
- C25D 5/611: {Smooth layers}
- C25D 5/627: {Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance}
- C25D 7/123: {Semiconductors first coated with a seed layer or a conductive layer}
- C25D 21/10: Agitating of electrolytes; Moving of racks
- H05K 3/06: the conductive material being removed chemically or electrolytically, e.g. by photo-etch process {(semi-additive methods H05K3/108)}
- H05K 3/107: {by filling grooves in the support with conductive material (H05K3/045, H05K3/101, H05K3/1258 and H05K3/465 take precedence)}
- H05K 3/423: {characterised by electroplating method}
- H10P 14/47: Electrolytic deposition, i.e. electroplating; Electroless plating
- H10P 52/403: {of conductive or resistive materials}
- H10W 20/033: {in openings in dielectrics}
- H10W 20/043: {for electroplating}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/057: {by selectively depositing, e.g. by using selective CVD or plating}
- H10W 20/058: {by depositing on sacrificial masks, e.g. using lift-off}
- H10W 20/062: {by smoothing of conductive parts, e.g. by planarisation}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/42: Vias, e.g. via plugs
- H10W 20/425: {Barrier, adhesion or liner layers}
- C25D: PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

One embodiment is a device which includes at least one filled via or trench wherein the at least one filled via or trench includes void-free filled metal or alloy, and the filled via or trench has an aspect ratio in a range from 9:1 to about 28:1.

## Claims

### Claim 1

A device comprising at least one filled via or trench wherein:
the at least one filled via or trench comprises void-free filled metal or metal alloy; and
the filled via or trench has an aspect ratio in a range from 9:1 to about 28:1.

### Claim 2 (depends on 1)

The device of claim 1 wherein the void-free filled metal or metal alloy comprises a material selected from a group consisting of Cu, Ag, Cu alloys, and Ag alloys.

### Claim 3 (depends on 2)

The device of claim 2 wherein the filled via or trench has a width from about 0.05 μm to about 0.35 μm.

### Claim 4 (depends on 2)

The device of claim 2 wherein the filled via or trench has a width from about 0.05 μm to 0.10 μm.

### Claim 5 (depends on 2)

The device of claim 2 wherein:
the filled via or trench is surrounded by one or more dielectric layers along its sidewalls; and
one or more barrier layers are interposed between the void-free filled metal or metal alloy and the one or more dielectric layers.

### Claim 6 (depends on 5)

The device of claim 5 further comprising a seed layer interposed between the void-free filled metal or metal alloy and the one or more barrier layers;
wherein the void-free filled metal or metal alloy comprises copper or copper alloy.

### Claim 7 (depends on 6)

The device of claim 6 wherein the filled via or trench is a filled via.

### Claim 8 (depends on 1)

The device of claim 1 wherein the filled via or trench has an aspect ratio in a range from 10:1 to about 28:1.

### Claim 9 (depends on 8)

The device of claim 8 wherein the void-free filled metal or metal alloy comprises a material selected from a group consisting of Cu, Ag, Cu alloys, and Ag alloys.

### Claim 10 (depends on 9)

The device of claim 9 wherein the filled via or trench has a width from about 0.05 μm to about 0.35 μm.

### Claim 11 (depends on 9)

The device of claim 9 wherein the filled via or trench has a width from about 0.05 μm to 0.10 μm.

### Claim 12 (depends on 9)

The device of claim 9 wherein:
the filled via or trench is surrounded by one or more dielectric layers along its sidewalls; and
one or more barrier layers are interposed between the void-free filled metal or metal alloy and the one or more dielectric layers.

### Claim 13 (depends on 12)

The device of claim 12 further comprising a seed layer interposed between the void-free filled metal or metal alloy and the one or more barrier layers;
wherein the void-free filled metal or metal alloy comprises copper or copper alloy.

### Claim 14 (depends on 13)

The device of claim 13 wherein the filled via or trench is a filled via.

### Claim 15 (depends on 1)

The device of claim 1 wherein the filled via or trench has an aspect ratio in a range from 12:1 to about 28:1.

### Claim 16 (depends on 15)

The device of claim 15 wherein the void-free filled metal or metal alloy comprises a material selected from a group consisting of Cu, Ag, Cu alloys, and Ag alloys.

### Claim 17 (depends on 16)

The device of claim 16 wherein the filled via or trench has a width from about 0.05 μm to about 0.35 μm.

### Claim 18 (depends on 16)

The device of claim 16 wherein the filled via or trench has a width from about 0.05 μm to 0.10 μm.

### Claim 19 (depends on 16)

The device of claim 16 wherein:
the filled via or trench is surrounded by one or more dielectric layers along its sidewalls; and
one or more barrier layers are interposed between the void-free filled metal or metal alloy and the one or more dielectric layers.

### Claim 20 (depends on 19)

The device of claim 19 further comprising a seed layer interposed between the void-free filled metal or metal alloy and the one or more barrier layers; and
the void-free filled metal or alloy comprises copper or copper alloy.

### Claim 21 (depends on 20)

The device of claim 20 wherein the filled via or trench is a filled via.

### Claim 22 (depends on 1)

The device of claim 1 wherein the filled via or trench has an aspect ratio in a range from 14:1 to about 28:1.

### Claim 23 (depends on 22)

The device of claim 22 wherein the void-free filled metal or metal alloy comprises a material selected from a group consisting of Cu, Ag, Cu alloys, and Ag alloys.

### Claim 24 (depends on 23)

The device of claim 23 wherein the filled via or trench has a width from about 0.05 μm to about 0.35 μm.

### Claim 25 (depends on 23)

The device of claim 23 wherein the filled via or trench has a width from about 0.05 μm to 0.10 μm.

### Claim 26 (depends on 23)

The device of claim 23 wherein:
the filled via or trench is surrounded by one or more dielectric layers along its sidewalls; and
one or more barrier layers are interposed between the void-free filled metal or metal alloy and the one or more dielectric layers.

### Claim 27 (depends on 26)

The device of claim 26 further comprising a seed layer interposed between the void-free filled metal or metal alloy and the one or more barrier layers; and
the void-free filled metal or alloy comprises copper or copper alloy.

### Claim 28 (depends on 27)

The device of claim 27 wherein the filled via or trench is a filled via.

### Claim 29 (depends on 1)

The device of claim 1 wherein the filled via or trench is a filled via.

### Claim 30 (depends on 8)

The device of claim 8 wherein the filled via or trench is a filled via.

### Claim 31 (depends on 15)

The device of claim 15 wherein the filled via or trench is a filled via.

### Claim 32 (depends on 22)

The device of claim 22 wherein the filled via or trench is a filled via.