# US 2014/0197515 A1 · High voltage circuit layout structure

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- Number: US 2014/0197515 A1
- Document ID: US20140197515A1
- Status: Published application
- Kind: A1
- Application number: 13/744,273
- Filed: 2013-01-17
- Published: 2014-07-17
- Earliest claimed: 2013-01-17
- Assignees: Monolithic Power Systems, Inc.
- Applicants: Monolithic Power Systems, Inc.
- Inventors: Joseph Urienza
- Web page: https://patentgrep.com/patent/US20140197515A1

## CPC

- H10D 8/60: Schottky-barrier diodes
- H10W 10/031: {of isolation regions comprising PN junctions}
- H10W 10/30: Isolation regions comprising PN junctions
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A high voltage circuit layout structure has a P-type substrate; a first N-type tub, a second N-type tub, a third N-type tub, a first P-type tub with a first width and a second P-type tub with a second width formed on the P-type substrate; wherein the first P-type tub is formed between the first N-type tub and the second N-type tub; and the second P-type tub is formed between the second N-type tub and the third N-type tub.

## Claims

### Claim 1

A high voltage circuit layout structure, comprising:
a P-type substrate;
a first N-type tub, a second N-type tub, and a third N-type tub formed on the P-type substrate, wherein the first N-type tub's potential and the third N-type tub's potential follow relatively with the second N-type tub's potential;
a first P-type tub having a first width formed on the P-type substrate and formed between the first N-type tub and the second N-type tub, the first width being dependent on the punch-through voltage requirement between the first N-type tub and the second N-type tub; and
a second P-type tub having a second width formed on the P-type substrate and formed between the second N-type tub and the third N-type tub, the second width being dependent on the punch-through voltage requirement between the second N-type tub and the third N-type tub.

### Claim 2 (depends on 1)

The high voltage circuit layout structure of claim 1, wherein each of the N-type tubs connects to the P-type substrate via an N-type buried layer.

### Claim 3 (depends on 1)

The high voltage circuit layout structure of claim 1, further comprising:
a first high sheet poly resistor formed on the first N-type tub but not connected to the first N-type tub directly;
a second high sheet poly resistor formed on the second N-type tub but not connected to the second N-type tub directly; and
a third high sheet poly resistor formed on the third N-type tub but not connected to the third N-type tub directly.

### Claim 4 (depends on 1)

The high voltage circuit layout structure of claim 1, further comprising:
an N-drift region next to the first N-type tub;
an N-well tub attached to the N-drift region; and
a band of N-plus, contact and Metal one over the N-well tub placed at the borders of the first N-type tub and the N-drift region.

### Claim 5 (depends on 1)

The high voltage circuit layout structure of claim 1, further comprising a third P-type tub and a fourth N-type tub formed in the first N-type tub, the third P-type tub and the fourth N-type tub being in a doughnut shape.

### Claim 6 (depends on 1)

The high voltage circuit layout structure of claim 1, further comprising a metal layer contacted with the first N-type tub and the second N-type tub to form a first Schottky diode and a second Schottky diode, and the said metal layer also contacted with the first P-type tub.

### Claim 7 (depends on 6)

The high voltage circuit layout structure of claim 6, wherein the first P-type tub has a P-plus region coupled to anodes of the first Schottky diode and the second Schottky diode to form an ohmic contact, respectively.

### Claim 8

A high voltage circuit layout structure, comprising:
a P-type substrate;
a plurality of N-type tubs formed on the P-type substrate, wherein each of N-type tub's potential relatively follows the adjacent N-type tubs' potential; and
at least one P-type tub formed on the P-type substrate and formed between two close-by N-type tubs, the P-type tub having a width with a minimum requirement and a maximum requirement.

### Claim 9 (depends on 8)

The high voltage circuit layout structure of claim 8, wherein each of the N-type tubs connects to the P-type substrate via an N-type buried layer.

### Claim 10 (depends on 8)

The high voltage circuit layout structure of claim 8, further comprising:
a plurality of high sheet poly resistors, each of the high sheet poly resistors being formed on each of the N-type tubs, and each of the high sheet poly resistors being not connected to the corresponding N-type tub directly.

### Claim 11 (depends on 8)

The high voltage circuit layout structure of claim 8, wherein the plurality of N-type tubs includes a first N-type tub, a second N-type tub and a third N-type tub.

### Claim 12 (depends on 11)

The high voltage circuit layout structure of claim 11, further comprising:
an N-drift region next to the first N-type tub;
an N-well tub attached to the N-drift region; and
a band of N-plus, contact and Metal one over the N-well tub placed at the borders of the first N-type tub and the N-drift region.

### Claim 13 (depends on 11)

The high voltage circuit layout structure of claim 11, wherein the third N-type tub is surrounded by the second N-type tub.

### Claim 14 (depends on 11)

The high voltage circuit layout structure of claim 11, wherein the second N-type tub and the third N-type tub are formed in the first N-type tub.

### Claim 15 (depends on 11)

The high voltage circuit layout structure of claim 11, further comprising a pad access formed on the second N-type tub to couple externally.

### Claim 16 (depends on 11)

The high voltage circuit layout structure of claim 11, further comprising a metal layer contacted with the first N-type tub and the second N-type tub to form a first Schottky diode and a second Schottky diode, and the said metal layer also contacted with the first P-type tub.

### Claim 17 (depends on 16)

The high voltage circuit layout structure of claim 16, wherein the P-type tub has a P-plus region coupled to anodes of the first Schottky diode and the second Schottky diode to form an ohmic contact, respectively.

### Claim 18 (depends on 8)

The high voltage circuit layout structure of claim 8, wherein the width of the P-type tub is dependent on the punch-through voltage requirement between the close-by N-type tubs.