# US 2014/0197509 A1 · Photosensitive imaging devices and associated methods

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- Number: US 2014/0197509 A1
- Document ID: US20140197509A1
- Status: Published application
- Kind: A1
- Application number: 13/770,897
- Filed: 2013-02-19
- Published: 2014-07-17
- Earliest claimed: 2009-09-17
- Assignees: SiOnyx, Inc.
- Applicants: SiOnyx, Inc.
- Inventors: Homayoon Haddad; Jeffrey McKee; Jutao Jiang; Drake Miller; Chintamani Palsule; Leonard Forbes
- Web page: https://patentgrep.com/patent/US20140197509A1

## CPC

- H10F 39/8067: {Reflectors}
- H10F 39/014: {of CMOS image sensors}
- H10F 39/024: {of coatings or optical elements}
- H10F 39/182: {Colour image sensors}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/8033: {Photosensitive area}
- H10F 39/805: {Coatings}
- H10F 39/8057: {Optical shielding}
- H10F 39/806: {Optical elements or arrangements associated with the image sensors}
- H10F 77/14: Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F 77/40: Optical elements or arrangements (surface textures H10F77/70)
- H10F 77/70: Surface textures, e.g. pyramid structures
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

## Claims

### Claim 1

A photosensitive imager device, comprising:
a plurality of semiconductor devices including semiconductor substrates having a light incident side and multiple doped regions forming at least one junction;
a textured region coupled to the light incident side of the semiconductor substrate and positioned to interact with electromagnetic radiation; and
at least one isolation feature operable to isolate the plurality of semiconductor devices from each other.

### Claim 2 (depends on 1)

The device of claim 1, wherein the at least one isolation feature operable to electrically isolate the plurality of semiconductor devices from each other.

### Claim 3 (depends on 1)

The device of claim 1, wherein the at least one isolation feature operable to optically isolate the plurality of semiconductor devices from each other.

### Claim 4 (depends on 1)

The device of claim 1, wherein the at least one isolation feature is a deep trench isolation feature.

### Claim 5 (depends on 1)

The device of claim 1, wherein the at least one isolation feature is a shallow trench isolation feature.

### Claim 6 (depends on 1)

The device of claim 1, wherein the at least one isolation feature includes a material selected from the group consisting of, metals, oxides, polymers, or combinations thereof.

### Claim 7 (depends on 1)

The device of claim 1, wherein the at least one isolation feature includes a reflecting material.

### Claim 8 (depends on 1)

The device of claim 1, further comprising a second textured region coupled to the semiconductor substrate opposite the light incident side.

### Claim 9 (depends on 1)

The device of claim 1, further comprising a reflective layer coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation.

### Claim 10 (depends on 9)

The device of claim 9, wherein the reflective layer includes a material selected from the group consisting of metal, oxide, or combinations thereof.

### Claim 11 (depends on 9)

The device of claim 9, wherein the reflective layer is a Bragg reflector.

### Claim 12 (depends on 1)

The device of claim 1, wherein the semiconductor substrates are epitaxially grown.

### Claim 13 (depends on 1)

The device of claim 1, further comprising at least on electrical transfer element functionally coupled to the plurality of semiconductor devices.

### Claim 14 (depends on 1)

The device of claim 1, wherein the semiconductor substrates are comprised of silicon.

### Claim 15 (depends on 1)

The device of claim 1, wherein the textured region is formed by a technique selected from the group consisting of lasing, chemical etching, anisotropic etching, isotropic etching, nanoimprinting, additional material deposition, and combinations thereof.

### Claim 16 (depends on 1)

The device of claim 1, wherein the photosensitive imager device is a backside illuminated imager device.

### Claim 17 (depends on 1)

The device of claim 1, wherein the photosensitive imager device is a front side illuminated imager device.