# US 2014/0197508 A1 · Image sensor and method for fabricating the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197508 A1 - Document ID: US20140197508A1 - Status: Published application - Kind: A1 - Application number: 13/744,341 - Filed: 2013-01-17 - Published: 2014-07-17 - Earliest claimed: 2013-01-17 - Assignees: United Microelectronics Corp. - Applicants: United Microelectronics Corporation - Inventors: Yi-Hsu CHEN; Yuh-Turng LIU; Yu-Ming WANG - Web page: https://patentgrep.com/patent/US20140197508A1 ## CPC - H10F 39/805: {Coatings} - H10F 39/024: {of coatings or optical elements} - H10F 39/804: {Containers or encapsulations} - H10F 39/806: {Optical elements or arrangements associated with the image sensors} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract An image sensor comprises a substrate, a plurality of image sensing elements and a first inorganic optical layer, wherein the substrate has an active region; the image sensing elements are disposed in the active region; and the first inorganic optical layer covers the image sensing elements and has at least two adjacent edges for forming an angle greater than 90 degrees (90°). ## Claims ### Claim 1 An image sensor, comprising: a substrate, having an active region; a plurality of image sensing elements, disposed in the active region; and a first inorganic optical layer, covering the image sensing elements and having at least two adjacent edges for forming an angle greater than 90 degrees (90°). ### Claim 2 (depends on 1) The image sensor according to claim 1, wherein the first inorganic optical layer allows light with a wavelength substantially ranging from 780 nm to 390 nm passing therethrough. ### Claim 3 (depends on 1) The image sensor according to claim 1, wherein the first inorganic optical layer has a thickness substantially ranging from 3 μm to 6 μm. ### Claim 4 (depends on 2) The image sensor according to claim 2, further comprising a second inorganic optical layer, covering the image sensing elements and having at least two adjacent edges for forming an angle greater than 90 degrees (90°). ### Claim 5 (depends on 4) The image sensor according to claim 4, wherein the second inorganic optical layer allows light with a wavelength substantially greater than 850 nm passing therethrough. ### Claim 6 (depends on 4) The image sensor according to claim 4, wherein the first inorganic optical layer and the second inorganic optical layer are partially overlapped. ### Claim 7 (depends on 4) The image sensor according to claim 4, wherein the first inorganic optical layer is disposed adjacent to the second inorganic optical layer. ### Claim 8 (depends on 1) The image sensor according to claim 1, further comprising: a color filter layer, disposed between the image sensing elements and the first inorganic optical layer; and a plurality of micro-lenses disposed between the color filter layer and the first inorganic optical layer. ### Claim 9 (depends on 8) The image sensor according to claim 8, further comprising a planarizing layer disposed between the color filter layer and the first inorganic optical layer or disposed over the first inorganic optical layer. ### Claim 10 (depends on 1) The image sensor according to claim 1, wherein the first inorganic optical layer has at least one rounded corner. ### Claim 11 (depends on 1) The image sensor according to claim 1, further comprising: a color filter layer, disposed over the first inorganic optical film; a planarizing layer disposed over the color filter layer; and a plurality of micro-lenses disposed over the planarizing layer. ### Claim 12 A method for fabricating an image sensor comprising: forming a plurality of image sensing elements in an active region of a substrate; and forming a first inorganic optical layer covering the image sensing elements, wherein the first inorganic optical layer comprises at least two adjacent edges for forming an angle greater than 90 degrees (90°). ### Claim 13 (depends on 12) The method for fabricating the image sensor according to claim 12, further comprising steps of forming a second inorganic optical layer covering the image sensing element matrix, wherein the second inorganic optical layer comprises at least two adjacent edges for forming an angle greater than 90 degrees (90°). ### Claim 14 (depends on 12) The method for fabricating the image sensor according to claim 12, wherein the first inorganic optical layer and the second inorganic optical layer are partially overlapped. ### Claim 15 (depends on 12) The method for fabricating the image sensor according to claim 12, wherein the second inorganic optical layer is formed adjacent to the first inorganic optical layer. ### Claim 16 (depends on 12) The method for fabricating the image sensor according to claim 12, wherein the first inorganic optical layer is deposited on the image sensing elements by an evaporation process. ### Claim 17 (depends on 16) The method for fabricating the image sensor according to claim 16, wherein the evaporation process has an operating temperature substantially less than a heat deformation temperature of a color filter layer. ### Claim 18 (depends on 16) The method for fabricating the image sensor according to claim 16, wherein the evaporation process has an operating temperature substantially ranging form 50° C. to 250° C. ### Claim 19 (depends on 12) The method for fabricating the image sensor according to claim 12, before the step of forming the first inorganic optical layer, further comprising: forming a color filter layer on the image sensing elements; and forming a plurality of micro-lenses disposed on the color filter layer. ### Claim 20 (depends on 19) The method for fabricating the image sensor according to claim 19, further comprising steps of forming a planarizing layer between the color filter layer and the first inorganic optical layer or over the first inorganic optical layer.