# US 2014/0197503 A1 · Sensor package

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2014/0197503 A1
- Document ID: US20140197503A1
- Status: Published application
- Kind: A1
- Application number: 14/218,048
- Filed: 2014-03-18
- Published: 2014-07-17
- Earliest claimed: 2007-07-25
- Assignees: Infineon Technologies AG
- Applicants: Infineon Technologies AG
- Inventors: Ralf Wombacher; Horst Theuss
- Web page: https://patentgrep.com/patent/US20140197503A1

## CPC

- H10W 74/43: comprising oxides, nitrides or carbides, e.g. ceramics or glasses
- B81B 7/0025: {Protection against chemical alteration}
- H10W 42/00: Arrangements for protection of devices (arrangements for thermal protection H10W40/00)
- H10W 72/60: Strap connectors, e.g. thick copper clips for grounding of power devices
- H10W 74/481: {comprising semiconductor materials}
- H10W 76/153: having interconnections in passages through the insulating or insulated base
- H10W 70/682: {comprising holes having chips therein}
- H10W 72/01208: {using permanent auxiliary members, e.g. using solder flow barriers, spacers or alignment marks}
- H10W 72/01215: {forming coatings}
- H10W 72/01515: {Forming coatings}
- H10W 72/0198: {batch processes}
- H10W 72/072: {of bump connectors}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07336: {Soldering or alloying}
- H10W 72/07337: {using a polymer adhesive, e.g. an adhesive based on silicone or epoxy}
- H10W 72/075: {of bond wires}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/50: Bond wires
- H10W 72/534: {being rectangular}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/5524: {comprising aluminium [Al]}
- H10W 72/5525: {comprising copper [Cu]}
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/871: {Bond wires and strap connectors}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/766: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)

## Abstract

A sensor package is disclosed. One embodiment provides a sensor device having a carrier, a semiconductor sensor mounted on the carrier and an active surface. Contact elements are electrically connecting the carrier with the semiconductor sensor. A protective layer made of an inorganic material covers at least the active surface and the contact elements.

## Claims

### Claim 1

A semiconductor package comprising:
a carrier;
a semiconductor sensor coupled to the carrier; and
a protective layer made of an oxide material covering at least a portion of the semiconductor sensor.

### Claim 2 (depends on 1)

The package of claim 1, wherein the protective layer is made of a metal oxide.

### Claim 3 (depends on 1)

The package of claim 1, wherein the protective layer is made of a compound of oxide materials.

### Claim 4 (depends on 1)

The package of claim 1, wherein the protective layer has a thickness in the range of 5 nm to 400 nm.

### Claim 5 (depends on 1)

The package of claim 1, comprising:
a mechanism that electrically couples the semiconductor sensor to the carrier; and
where the protective layer covers at least a portion of the semiconductor sensor and the mechanism.

### Claim 6 (depends on 5)

The package of claim 5, where the mechanism includes a wire bond.

### Claim 7 (depends on 5)

The package of claim 5, where the mechanism includes a solder ball.

### Claim 8

A semiconductor device comprising:
a carrier;
a semiconductor sensor comprising a bottom side and a side wall adjoining the bottom side, the semiconductor sensor coupled to the carrier such that the bottom side faces the carrier;
wire-bonds electrically connecting the carrier with the semiconductor sensor;
a protective layer made of organic semiconductor material including an oxide, covering at least a portion of the semiconductor sensor and directly contacting the wire-bonds; and
wherein a second portion of the protective layer is in direct contact with the side wall of the semiconductor sensor, and where the protective layer has a thickness in the range of 5 nm to 400 nm.

### Claim 9 (depends on 8)

The device of claim 8, wherein the organic material is an organometallic material.

### Claim 10

A sensor device, comprising:
a carrier;
a semiconductor sensor mounted on the carrier and having an active surface and a side wall;
contact elements electrically connecting the carrier with the semiconductor sensor;
a protective layer made of an oxide material covering at least the active surface and directly contacting the contact elements; and
wherein a second portion of the protective layer is in direct contact with the side wall of the semiconductor sensor where the protective layer has a thickness in the range of 5 nm to 400 nm.

### Claim 11 (depends on 10)

The sensor device of claim 10, wherein the protective layer is exposed to the ambience.

### Claim 12 (depends on 10)

The sensor device of claim 10, wherein the protective layer further covers conductive contact elements of the carrier.

### Claim 13 (depends on 10)

The sensor device of claim 10, wherein the active surface of the semiconductor sensor comprises a movable member.

### Claim 14 (depends on 13)

The sensor device of claim 13, wherein the movable member is a membrane or a tongue or a cantilever.

### Claim 15 (depends on 13)

The sensor device of claim 13, wherein the protective layer is thinner than the movable member.

### Claim 16 (depends on 10)

The sensor device of claim 10, wherein the semiconductor sensor is one of the group of pressure sensor, microphone and acceleration sensor.

### Claim 17 (depends on 10)

The sensor device of claim 10, wherein the protective layer has a thickness in the range of 10 nm to 100 nm.

### Claim 18 (depends on 10)

The sensor device of claim 10, wherein the protective layer is made of a metal oxide or a compound of the oxides.

### Claim 19 (depends on 10)

The sensor device of claim 10, wherein the protective layer is made of a silicate.

### Claim 20 (depends on 10)

The sensor device of claim 10, further comprising:
an open cavity structure attached to the carrier, wherein the semiconductor sensor is arranged within the open cavity structure.