# US 2014/0197489 A1 · Power MOSFETs and Methods for Forming the Same

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- Number: US 2014/0197489 A1
- Document ID: US20140197489A1
- Status: Published application
- Kind: A1
- Application number: 13/739,024
- Filed: 2013-01-11
- Published: 2014-07-17
- Earliest claimed: 2013-01-11
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Fu-Yu Chu; Chih-Chang Cheng; Tung-Yang Lin; Ruey-Hsin Liu
- Web page: https://patentgrep.com/patent/US20140197489A1

## CPC

- H10D 30/655: {having edge termination structures}
- H10D 30/0221: {having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]}
- H10D 30/0281: {of lateral DMOS [LDMOS] FETs}
- H10D 30/603: {having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]}
- H10D 30/65: Lateral DMOS [LDMOS] FETs
- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 62/154: {Dispositions}
- H10D 62/157: {Impurity concentrations or distributions}
- H10D 62/158: {Dispositions}
- H10D 62/307: {the doping variations being parallel to the channel lengths}
- H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
- H10D 64/111: {Field plates}
- H10P 30/204: {into Group IV semiconductors}
- H10P 30/21: {of electrically active species}
- H10P 30/22: using masks
- H10P 30/222: {characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and methods of forming the same are provided. A power MOSFET may comprise a first drift region formed at a side of a gate electrode, and a second drift region beneath the gate electrode, adjacent to the first drift region, with a depth less than a depth of the first drift region so that the first drift region and the second drift region together form a stepwise shape. A sum of a depth of the second drift region, a depth of the gate dielectric, and a depth of the gate electrode may be of substantially a same value as a depth of the first drift region. The first drift region and the second drift region may be formed at the same time, using the gate electrode as a part of the implanting mask.

## Claims

### Claim 1

A power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) comprising:
a substrate;
a first region extending from a top surface of the substrate into the substrate, wherein the first region is of a first conductivity type with a first impurity concentration;
a gate dielectric over and in contact with the first region;
a gate electrode over and in contact with the gate dielectric;
a second region of the first conductivity type, formed within the first region at a first side of the gate electrode, wherein the second region has a second impurity concentration;
a stepped drift region of a second conductivity type opposite to the first conductivity type, of a third impurity concentration, and within the first region, wherein the stepped drift region comprises a first part formed at a second side of the gate electrode, and a second part beneath the gate electrode, adjacent to the first part, with a depth less than a depth of the first part;
a source region of the second conductivity type within the second region; and
a drain region of the second conductivity type within the first part of the stepped drift region.

### Claim 2 (depends on 1)

The power MOSFET of claim 1, wherein a sum of the depth of the second part of the stepped drift region, a depth of the gate dielectric, and a depth of the gate electrode is of substantially a same value as the depth of the first part of the stepped drift region.

### Claim 3 (depends on 1)

The power MOSFET of claim 1, wherein the second region extends underlying the gate electrode.

### Claim 4 (depends on 1)

The power MOSFET of claim 1, wherein the gate dielectric comprises silicon oxide, silicon nitride, or a high-k dielectric material.

### Claim 5 (depends on 1)

The power MOSFET of claim 1, wherein the gate electrode comprises a doped polysilicon, a metal, or a metal alloy.

### Claim 6 (depends on 1)

The power MOSFET of claim 1, further comprising a third region within the first region at the second side of the gate electrode and below the first part of the stepped drift region, wherein the third region is of the second conductivity type and having a fourth impurity concentration.

### Claim 7 (depends on 1)

The power MOSFET of claim 1, further comprising a pickup region of the first conductivity type within the second region and next to the source region.

### Claim 8 (depends on 1)

The power MOSFET of claim 1, further comprising a first spacer around a first edge of the gate dielectric and the gate electrode, and a second spacer around a second edge of the gate dielectric and the gate electrode.

### Claim 9 (depends on 1)

The power MOSFET of claim 1, further comprising an insulation region adjacent to the second region and another insulation region next to the first part of the stepped drift region, extending from the top surface of the substrate into the substrate.

### Claim 10 (depends on 1)

The power MOSFET of claim 1, further comprising:
a dielectric layer comprising a first portion over and in contact with the first part of the stepped drift region and a second portion over and in contact with the gate electrode; and
a conductive field plate over and in contact with the dielectric layer, wherein the field plate comprises a first portion over and in contact with the first portion of the dielectric layer, and a second portion over and in contact with the second portion of the dielectric layer.

### Claim 11

A method comprising:
providing a substrate with a plurality of insulation regions surrounding a first region, wherein the first region extends from a top surface of the substrate into the substrate, the first region is of a first conductivity type with a first impurity concentration;
depositing a gate dielectric material over and in contact with the first region;
depositing a gate electrode material over and in contact with the gate dielectric material;
removing a first part of the gate dielectric material and a first part of the gate electrode material to expose a first portion of the first region;
forming a second region within the first portion of the first region, wherein the second region is of the first conductivity type and has a second impurity concentration;
forming a gate dielectric and a gate electrode over the first region by removing a second part of the gate dielectric material and a second part of the gate electrode material to expose a second portion of the first region;
forming a first drift region within the second portion of the first region, wherein the first drift region is of a second conductivity type opposite to the first conductivity type, the first drift region has a third impurity concentration;
forming a second drift region within the first region, wherein the second drift region is of the second conductivity type and of the third impurity concentration, the second drift region is beneath the gate electrode, adjacent to the first drift region, with a depth less than a depth of the first drift region, and the first drift region and the second drift region together form a stepwise shape;
forming a source region of the second conductivity type within the second region; and
forming a drain region of the second conductivity type within the first drift region.

### Claim 12 (depends on 11)

The method of claim 11, wherein forming the first drift region and forming the second drift region is done at a same time, and a sum of the depth of the second drift region, a depth of the gate dielectric, and a depth of the gate electrode is of substantially a same value as the depth of the first drift region.

### Claim 13 (depends on 11)

The method of claim 11 further comprising:
forming a third region within the first region before depositing a gate dielectric material over the first region, wherein the third region is of the second conductivity type and has a fourth impurity concentration.

### Claim 14 (depends on 11)

The method of claim 11 further comprising:
forming a pickup region of the first conductivity type within the second region and next to the source region.

### Claim 15 (depends on 11)

The method of claim 11 further comprising:
forming a dielectric layer comprising a first portion over and in contact with the first drift region and a second portion over and in contact with the gate electrode; and
forming a conductive field plate over and in contact with the dielectric layer, wherein the field plate comprises a first portion over and in contact with the first portion of the dielectric layer, and a second portion over and in contact with the second portion of the dielectric layer.

### Claim 16

A power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) comprising:
a substrate;
a first region extending from a top surface of the substrate into the substrate, wherein the first region is of a first conductivity type with a first impurity concentration;
a gate dielectric over and in contact with the first region;
a gate electrode over and in contact with the gate dielectric;
a second region within the first region at a first side of the gate electrode, wherein the second region is of the first conductivity type, and has a second impurity concentration;
a third region within the first region at a second side of the gate electrode, wherein the third region is of a second conductivity type opposite to the first conductivity type, and has a third impurity concentration;
a stepped drift region of the second conductivity type, of a fourth impurity concentration, and within the first region, wherein the stepped drift region comprises a first part formed above the third region, and a second part beneath the gate electrode, adjacent to the first part, with a depth less than a depth of the first part;
a source region of the second conductivity type within the second region; and
a drain region of the second conductivity type within the first part of the stepped drift region.

### Claim 17 (depends on 16)

The power MOSFET of claim 16, further comprising a pickup region of the first conductivity type within the second region and next to the source region.

### Claim 18 (depends on 16)

The power MOSFET of claim 16, further comprising a first spacer around a first edge of the gate dielectric and the gate electrode, and a second spacer around a second edge of the gate dielectric and the gate electrode.

### Claim 19 (depends on 16)

The power MOSFET of claim 16, further comprising:
a dielectric layer comprising a first portion over and in contact with the first part of the stepped drift region and a second portion over and in contact with the gate electrode; and
a conductive field plate over and in contact with the dielectric layer, wherein the field plate comprises a first portion over and in contact with the first portion of the dielectric layer, and a second portion over and in contact with the second portion of the dielectric layer.

### Claim 20 (depends on 16)

The power MOSFET of claim 16, wherein the second region extends underlying the gate electrode.