# US 2014/0197483 A1 · Trench shielding structure for semiconductor device and method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197483 A1 - Document ID: US20140197483A1 - Status: Published application - Kind: A1 - Application number: 14/216,914 - Filed: 2014-03-17 - Published: 2014-07-17 - Earliest claimed: 2008-11-14 - Assignees: Semiconductor Components Industries, LLC - Applicants: Semiconductor Components Industries, LLC - Inventors: Peter A. Burke; Gordon M. Grivna; Prasad Venkatraman - Web page: https://patentgrep.com/patent/US20140197483A1 ## CPC - H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors} - H10D 30/0297: {using recessing of the gate electrodes, e.g. to form trench gate electrodes} - H10D 30/665: {having edge termination structures} - H10D 64/035: {comprising conductor-insulator-conductor-insulator-semiconductor structures} - H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates} - H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates} - H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs} - H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge - H10D 62/832: being Group IV materials comprising two or more elements, e.g. SiGe - H10D 64/252: {for vertical or pseudo-vertical devices} - H10D 64/2527: {for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies} - H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)} - H10D 64/517: {characterised by the conducting layers} - H10D 64/519: {characterised by their top-view geometrical layouts} - H10D 64/62: Electrodes ohmically coupled to a semiconductor - H10D 64/662: {the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures} - H10D 64/663: {the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the shielding structure is placed beneath a control pad. In another embodiment, the shielding structure is placed beneath a control runner. ## Claims ### Claim at position 1 1-21. (canceled) ### Claim 22 A semiconductor device structure comprising: a region of semiconductor material having a major surface, an active region and a contact region; a first trench structure formed in the region of semiconductor material and extending from the active region to the contact region, wherein the first trench structure includes a control electrode layer and a shield electrode layer, and wherein an upper surface of the shield electrode layer in the contact region is recessed within the first trench without overlapping the major surface of the region of semiconductor material in the contact region; a first conductive layer coupled to the control electrode layer; and a second conductive layer coupled to the shield electrode layer within the first trench structure. ### Claim 23 (depends on 22) The structure of claim 22, wherein an upper surface of the control electrode layer in the contact region is recessed within the first trench without overlapping the major surface of the semiconductor material in the contact region, and wherein the first conductive layer contacts the control electrode layer within the first trench structure. ### Claim 24 (depends on 23) The structure of claim 23, wherein the first trench structure includes a gate dielectric layer separating the control electrode layer from the region of semiconductor material, and wherein the shield electrode layer in the contact region is separated from the control electrode layer at the major surface by an insulator layer that is thicker than the gate dielectric layer. ### Claim 25 (depends on 23) The structure of claim 23, wherein the first and second conductive layers comprise conductive plugs. ### Claim 26 (depends on 22) The structure of claim 22, wherein the structure further comprises a second contact region formed within the active region for further contacting the shield electrode layer within the active region. ### Claim 27 (depends on 22) The structure of claim 22, wherein the second conductive layer makes contact to the shield electrode layer adjacent an edge of the semiconductor device, and wherein the first conductive layer is between the active area and the second conductive layer. ### Claim 28 (depends on 22) The structure of claim 22, wherein the control electrode layer is separated from the region of semiconductor material by a first insulator layer, and wherein the shield electrode layer is separated from the region of semiconductor material by a second insulator layer, and wherein the control electrode layer is separated from the shield electrode layer by a third insulator layer, wherein the second and third insulator layers are thicker than the first insulator layer. ### Claim 29 (depends on 22) The structure of claim 22, wherein the second conductive layer includes a portion that wraps around an end portion of the first conductive layer, and wherein the first and second conductive layers do not overlap. ### Claim 30 A semiconductor device structure comprising: a region of semiconductor material having a major surface, an active area, and a contact area; a trench having a striped shape formed in the region of semiconductor material and extending from the active area to the contact area; a source region adjacent the trench in the active area; a shield electrode formed in the trench and separated from the region of semiconductor material by a first insulator layer; a control electrode formed in the trench and separated from the region of semiconductor material by a second insulator layer and separated from the shield electrode by a third insulator layer, wherein shield electrode and the control electrode terminate in the contact area, and wherein the shield electrode is recessed below the major surface of the region of semiconductor material in the contact area without overlapping the major surface in the contact area; a first conductive structure contacting the control electrode in the contact area; and a second conductive structure contacting the shield electrode inside the trench within the contact area and contacting the source region in the active area, wherein the second conductive structure includes a portion that wraps around an end of the first conductive structure. ### Claim 31 (depends on 30) The structure of claim 30, wherein the first and third insulator layers are thicker than the second insulator layer. ### Claim 32 (depends on 30) The structure of claim 30 further comprising a metal silicide layer formed on the control electrode and extending along the control electrode from the active area to the contact area. ### Claim 33 (depends on 30) The structure of claim 30, wherein the control electrode is recessed below the major surface of the region of semiconductor material in the contact area without overlapping the major surface in the contact area, and wherein the first conductive structure contacts the control electrode inside the trench within the contact area. ### Claim 34 A semiconductor device structure comprising: a region of semiconductor material having a major surface, an active area, and a contact area; a trench having a striped shape formed in the region of semiconductor material and extending from the active area to the contact area; a source region adjacent the trench in the active area; a shield electrode formed in the trench and separated from the region of semiconductor material by a first insulator layer; a control electrode formed in the trench and separated from the region of semiconductor material by a second insulator layer and separated from the shield electrode by a third insulator layer, wherein the shield electrode and the control electrode terminate in the contact area, and wherein the shield electrode terminates in the contact area without overlapping the major surface of the region of semiconductor material in the contact area, and wherein the shield electrode is recessed below the major surface of the region of semiconductor material in the contact area, and wherein the first and third insulator layers are thicker than the second insulator layer; a first conductive structure contacting the control electrode in the contact area; and a second conductive structure contacting the shield electrode within the contact area and contacting the source region in the active area. ### Claim 35 (depends on 34) The structure of claim 34, wherein the second conductive structure includes a portion that wraps around an end of the first conductive structure. ### Claim 36 (depends on 34) The structure of claim 34, wherein the first conductive structure and the second conductive structure do not overlap. ### Claim 37 (depends on 34) The structure of claim 34, wherein the first conductive structure and the second conductive structure comprise the same material. ### Claim 38 (depends on 34) The structure of claim 34, wherein the third insulator layer is thicker than the first insulator layer. ### Claim 39 (depends on 34) The structure of claim 34, wherein the second conductive structure contacts the shield electrode in the active area. ### Claim 40 (depends on 39) The structure of claim 39, wherein the second conductive structure contacts the shield electrode at a location of the active area that is offset from a central portion of the semiconductor device. ### Claim 41 (depends on 34) The structure of claim 34, wherein the second conductive structure includes a conductive plug. ### Claim 42 A semiconductor device structure comprising: a region of semiconductor material having a major surface, an active region and a contact region; a first trench structure formed in the region of semiconductor material and extending from the active region to the contact region, wherein the first trench structure includes a control electrode layer and a shield electrode layer, and wherein an upper surface of the control electrode layer in the contact region terminates without overlapping the major surface of the region of semiconductor material in the contact region; a first conductive layer coupled to the control electrode layer; and a second conductive layer coupled to the shield electrode layer. ### Claim 43 (depends on 42) The structure of claim 42, wherein an upper surface of the shield electrode layer in the contact region terminates without overlapping the major surface of the semiconductor material in the contact region, and wherein the second conductive layer contacts the shield electrode layer within the first trench structure. ### Claim 44 (depends on 42) The structure of claim 42, wherein the shield electrode layer overlaps onto the major surface in the contact region, and wherein the second conductive layer makes contact to the shield electrode layer in the contact region at a location spaced apart from the first trench structure. ### Claim 45 (depends on 42) The structure of claim 42, wherein the second conductive layer includes a portion that wraps around an end portion of the first conductive layer, and wherein the first and second conductive layers do not overlap.