# US 2014/0197482 A1 · Semiconductor device and method of forming the same

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- Number: US 2014/0197482 A1
- Document ID: US20140197482A1
- Status: Published application
- Kind: A1
- Application number: 14/183,097
- Filed: 2014-02-18
- Published: 2014-07-17
- Earliest claimed: 2010-11-30
- Assignees: PS4 Luxco S.a.r.l.
- Inventors: Noriaki MIKASA
- Web page: https://patentgrep.com/patent/US20140197482A1

## CPC

- H10D 30/63: Vertical IGFETs (H10D30/66 {, H10D30/6728, H10D30/689, H10D30/693} take precedence)
- H10B 12/0335: {Making a connection between the transistor and the capacitor, e.g. plug}
- H10B 12/053: {the transistor being at least partially in a trench in the substrate (vertical transistor in combination with a capacitor formed in a substrate trench H10B12/0383)}
- H10B 12/315: {with the capacitor higher than a bit line}
- H10B 12/34: {the transistor being at least partially in a trench in the substrate}
- H10B 12/488: {Word lines}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A semiconductor device includes a semiconductor substrate having a first gate groove having first and second side walls facing to each other. A first gate insulating film covers the first and second side walls. A first gate electrode is disposed on the first gate insulating film and in a lower portion of the first gate groove. A first burying insulating film buries the first gate groove and covers the first gate electrode. A first diffusion region is adjacent to a first upper portion of the first gate insulating film. The first upper portion is positioned on an upper portion of the first side wall of the first gate groove. A second diffusion region is in contact with an upper portion of the second side wall of the first gate groove.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor substrate having a first gate groove having first and second side walls facing to each other;
a first gate insulating film covering the first and second side walls of the first gate groove;
a first gate electrode on the first gate insulating film, the first gate electrode being in a lower portion of the first gate groove;
a first burying insulating film that buries the first gate groove, the first burying insulating film covering the first gate electrode;
a first diffusion region adjacent to a first upper portion of the first gate insulating film, the first upper portion being on an upper portion of the first side wall of the first gate groove; and
a second diffusion region in contact with an entire portion of the second side wall of the first gate groove.