# US 2014/0197476 A1 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197476 A1 - Document ID: US20140197476A1 - Status: Published application - Kind: A1 - Application number: 14/107,858 - Filed: 2013-12-16 - Published: 2014-07-17 - Earliest claimed: 2013-01-17 - Assignees: Fuji Electric Co., Ltd. - Applicants: Fuji Electric Co., Ltd. - Inventors: Takayuki SHIMATOU - Web page: https://patentgrep.com/patent/US20140197476A1 ## CPC - H10D 64/111: {Field plates} - H10D 12/441: {Vertical IGBTs} - H10D 30/665: {having edge termination structures} - H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions} - H10D 64/112: {comprising multiple field plate segments} - H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors} - H10D 62/112: {for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers} - H10D 62/142: {Anode regions of thyristors or collector regions of gated bipolar-mode devices} - H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device includes element active portion X and element peripheral portion Y. An interlayer insulating film is formed on upper surfaces of portions X and Y. A source electrode connected to a p base region and n-type source region and a gate metal wiring formed annularly surrounding the source electrode are formed on element active portion X side upper surface of the interlayer insulating film. The gate metal wiring connects to a gate electrode. An organic protective film with openings is formed on a first main surface side upper surface of the semiconductor substrate, and the openings serve as a gate electrode pad partially exposing the gate metal wiring and a source electrode pad partially exposing the source electrode. An inorganic protective film formed between the gate metal wiring and the organic protective film covers the gate metal wiring. The semiconductor device is highly reliable. ## Claims ### Claim 1 A semiconductor device comprising an element active portion and an element peripheral portion provided in an outer periphery than the element active portion, wherein (i) the element active portion comprises: a second conductive type base region which is formed in a first conductive type semiconductor layer on a first main surface side of a semiconductor substrate; a first conductive type source region which is formed in the base region; a gate insulating film which is formed on the surface of the semiconductor substrate in the base region between the semiconductor layer and the source region; a gate electrode which is formed on the gate insulating film; an interlayer insulating film which is formed on the gate electrode; a source electrode which is formed on the interlayer insulating film and connected to the base region and the source region; and an annular gate metal wiring which is formed on the interlayer insulating film so as to surround the source electrode and which is electrically connected to the gate electrode; and (ii) the element peripheral portion comprises: at least two guard rings of the second conductive type which are separately formed in the semiconductor layer an insulating layer which is formed on the first main surface of the semiconductor substrate; the interlayer insulating film which is formed on the insulating film; at least one annular field plate electrode which is formed on the interlayer insulating layer so as to surround the element active portion and which is electrically connected to the guide rings; an organic protective film with which the first main surface side upper surface of the semiconductor substrate is covered, and which is in contact with the interlayer insulating layer while having a first opening portion partially exposing the gate metal wiring and a second opening portion partially exposing the source electrode; and an inorganic protective film which is formed between the gate metal wiring and the organic protective film so as to cover the gate metal wiring. ### Claim 2 (depends on 1) A semiconductor device according to claim 1, wherein the inorganic protective film is not formed in an outer periphery than the inorganic protective film formed on a side surface of the gate metal wiring in the element peripheral portion side. ### Claim 3 (depends on 1) A semiconductor device according to claim 1, wherein the inorganic protective film is not formed between the inorganic protective film formed on a side surface of the gate metal wiring in the element peripheral portion side and a side surface of the field plate electrode in an outermost periphery of the element peripheral portion; a second conductive type region formed in a surface layer of the semiconductor layer and an annular channel stopper electrode formed on the interlayer insulating film so as to be electrically connected to the semiconductor layer or the second conductive type region are formed in the outermost periphery of the element peripheral portion; and a second inorganic protective film is provided between the channel stopper electrode and the organic protective film. ### Claim 4 (depends on 1) A semiconductor device according to claim 1, wherein a third inorganic protective film is provided between the source electrode and the organic protective film. ### Claim 5 (depends on 1) A semiconductor device according to claim 1, wherein the inorganic protective film is provided between the source electrode and the organic protective film, between the interlayer insulating film and the organic protective film and between the gate metal wiring and the organic protective film so as to be consecutive in the range of from an opening end of the source electrode to an end portion of the gate metal wiring on the element peripheral portion side. ### Claim 6 (depends on 1) A semiconductor device according to claim 1, wherein a gate electrode pad partially exposing the gate metal wiring is provided in the first opening portion and a source electrode pad partially exposing the source electrode is provided in the second opening portion. ### Claim 7 (depends on 1) A semiconductor device according to claim 1, wherein the inorganic protective film is made of one selected from a silicon oxide film and a silicon nitride film. ### Claim 8 (depends on 1) A semiconductor device according to claim 1, wherein the inorganic protective film consists of a laminated film. ### Claim 9 (depends on 1) A semiconductor device according to claim 1, wherein the organic protective film is made of one selected from polybenzoxazole and polyimide. ### Claim 10 (depends on 1) A semiconductor device according to claim 1, wherein the gate metal wiring is made of an alloy containing aluminum.