# US 2014/0197454 A1 · Photo detection device

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- Number: US 2014/0197454 A1
- Document ID: US20140197454A1
- Status: Published application
- Kind: A1
- Application number: 14/154,460
- Filed: 2014-01-14
- Published: 2014-07-17
- Earliest claimed: 2013-01-16
- Assignees: Seoul Viosys Co., Ltd.
- Applicants: Seoul Viosys Co., Ltd.
- Inventors: Ki Yon PARK; Chang Suk HAN; Hwa Mok KIM; Hyo Shik CHOI; Daewoong SUH
- Web page: https://patentgrep.com/patent/US20140197454A1

## CPC

- H10F 30/222: the potential barrier being a PN heterojunction
- H10F 10/18: Photovoltaic cells having only Schottky potential barriers
- H10F 30/227: the potential barrier being a Schottky barrier
- H10F 71/1274: {comprising nitrides, e.g. InGaN or InGaAlN}
- H10F 77/1246: {III-V nitrides, e.g. GaN}
- H10F 77/12485: {comprising nitride compounds, e.g. InGaN}
- H10F 77/331: {for filtering or shielding light, e.g. multicolour filters for photodetectors}
- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H10F 77/70: Surface textures, e.g. pyramid structures
- Y02E 10/50: Photovoltaic [PV] energy
- Y02E 10/544: Solar cells from Group III-V materials
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

TA photo detection device, including a substrate, a band-pass filter layer formed over the substrate, a light absorption layer formed over the band-pass filter layer, a Schottky layer formed on a portion of the light absorption layer, a first electrode layer formed on a portion of the Schottky layer, and a second electrode layer formed on the light absorption layer and spaced apart from the Schottky layer.

## Claims

### Claim 1

A photo detection device, comprising:
a substrate;
a band-pass filter layer disposed on the substrate;
a light absorption layer disposed on the band-pass filter layer;
a Schottky layer disposed on a portion of the light absorption layer;
a first electrode layer disposed on a portion of the Schottky layer; and
a second electrode layer disposed on the light absorption layer and spaced apart from the Schottky layer.

### Claim 2 (depends on 1)

The photo detection device of claim 1, wherein the substrate is selected from a sapphire substrate, an AlN substrate, a SiC substrate, and a GaN substrate.

### Claim 3 (depends on 1)

The photo detection device of claim 1, wherein a light incidence surface of the substrate is a mirror surface having permeability.

### Claim 4 (depends on 1)

The photo detection device of claim 1, further comprising a buffer layer disposed between the substrate and the band-pass filter layer.

### Claim 5 (depends on 4)

The photo detection device of claim 4, wherein the buffer layer has a larger energy bandgap than the band-pass filter layer.

### Claim 6 (depends on 5)

The photo detection device of claim 5, wherein:
the band-pass filter layer is configured to absorb light of a specific wavelength region; and
the light absorption layer has a smaller energy bandgap than the band-pass filter layer.

### Claim 7 (depends on 6)

The photo detection device of claim 6, wherein:
the band-pass filter layer comprises an AlxGa1-xN (y<x<1) layer; and
the light absorption layer comprises an AlyGa1-yN (0<y<x) layer or an InzGa1-zN (0<z<1) layer.

### Claim 8 (depends on 7)

The photo detection device of claim 7, wherein the buffer layer comprises an AlN layer.

### Claim 9 (depends on 6)

The photo detection device of claim 6, further comprising a reactivity tilt control layer disposed between the band-pass filter layer and the light absorption layer.

### Claim 10 (depends on 9)

The photo detection device of claim 9, wherein an energy bandgap of the reactivity tilt control layer decreases from the band-pass filter layer to the light absorption layer.

### Claim 11 (depends on 10)

The photo detection device of claim 10, wherein the energy bandgap of the reactivity tilt control layer is reduced linearly or by steps.

### Claim 12 (depends on 11)

The photo detection device of claim 11, wherein:
the reactivity tilt control layer comprises an AlGaN layer; and
an Al content of the reactivity tilt control layer decreases from the band-pass filter layer to the light absorption layer.

### Claim 13 (depends on 1)

The photo detection device of claim 1, further comprising a capping layer disposed on a portion of the light absorption layer,
wherein the Schottky layer is disposed on a portion of the capping layer.

### Claim 14 (depends on 13)

The photo detection device of claim 13, wherein the capping layer comprises a p-IndGa1-dN (0<d<1) layer.

### Claim 15 (depends on 13)

The photo detection device of claim 13, wherein the Schottky layer comprises a material selected from ITO, Pt, W, Ti, Pd, Ru, Cr, and Au.

### Claim 16

A photo detection device, comprising:
a band-pass filter layer;
a light absorption layer disposed on a first surface of the band-pass filter layer;
a Schottky layer disposed on a first surface of the light absorption layer;
a first electrode layer disposed on a first surface of the Schottky layer; and
a second electrode layer disposed on a portion of a second surface of the band-pass filter layer that opposes the first surface of the band-pass filter layer.

### Claim 17 (depends on 16)

The photo detection device of claim 16, further comprising a transparent electrode layer disposed on a second surface of the band-pass filter layer that opposes the first surface of the band-pass filter layer,
wherein the second electrode layer is disposed on a portion of a second surface of the transparent electrode layer that opposes the first surface of the transparent electrode layer.

### Claim 18 (depends on 17)

The photo detection device of claim 17, wherein the band-pass filter layer has an etched first surface.

### Claim 19 (depends on 18)

The photo detection device of claim 18, wherein the band-pass filter layer is formed on a substrate selected from a sapphire substrate, an SiC substrate, a GaN substrate, an AlN substrate, a Si substrate, and a GaAs substrate, and the first surface of the band-pass filter layer is removed from the substrate, prior to being etched.

### Claim 20 (depends on 18)

The photo detection device of claim 18, wherein the band-pass filter layer is etched to a thickness of 0.1 to 1 μm.

### Claim 21 (depends on 16)

The photo detection device of claim 16, wherein:
the band-pass filter layer is configured to absorb light of a specific wavelength region; and
the light absorption layer has a smaller energy bandgap than the band-pass filter layer.

### Claim 22 (depends on 21)

The photo detection device of claim 21, wherein:
the band-pass filter layer comprises an AlxGa1-xN (y<x<1) layer; and
the light absorption layer comprises an AlyGa1-yN (0<y<x) layer, or an InzGa1-zN (0<z<1) layer.

### Claim 23 (depends on 21)

The photo detection device of claim 21, further comprising a reactivity tilt control layer disposed between the band-pass filter layer and the light absorption layer.

### Claim 24 (depends on 23)

The photo detection device of claim 23, wherein an energy bandgap of the reactivity tilt control layer decreases from the band-pass filter layer to the light absorption layer.

### Claim 25 (depends on 24)

The photo detection device of claim 24, wherein the energy bandgap of the reactivity tilt control layer is reduced linearly or by steps.

### Claim 26 (depends on 25)

The photo detection device of claim 25, wherein:
the reactivity tilt control layer comprises an AlGaN layer; and
an Al content of the reactivity tilt control layer decreases from the band-pass filter layer to the light absorption layer.

### Claim 27 (depends on 16)

The photo detection device of claim 16, further comprising a capping layer disposed between the light absorption layer and the Schottky layer.

### Claim 28 (depends on 27)

The photo detection device of claim 27, wherein the capping layer comprises a p-IndGa1-dN (0<d<1) layer.

### Claim 29 (depends on 27)

The photo detection device of claim 27, wherein the Schottky layer comprises a material selected from ITO, Pt, W, Ti, Pd, Ru, Cr, and Au.