# US 2014/0197449 A1 · Semiconductor rectifier device

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- Number: US 2014/0197449 A1
- Document ID: US20140197449A1
- Status: Published application
- Kind: A1
- Application number: 14/155,232
- Filed: 2014-01-14
- Published: 2014-07-17
- Earliest claimed: 2013-01-14
- Assignees: Electronics and Telecommunications Research Institute
- Applicants: Electronics and Telecommunications Research Institute
- Inventors: Kunsik PARK; Kyoung IL NA; JIN-GUN KOO; Jin Ho LEE; Jong II WON
- Web page: https://patentgrep.com/patent/US20140197449A1

## CPC

- H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00)
- H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
- H10D 64/111: {Field plates}
- H10D 64/519: {characterised by their top-view geometrical layouts}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Provided is a semiconductor rectifier device. The semiconductor rectifier device may include a substrate doped with a first conductive type, a second electrode provided on a bottom surface of the substrate, an active region and a field region defined on the substrate, a gate provided in the active region, a gate insulating film provided between the gate and the substrate, body regions provided on the substrate adjacent to first and second sides of the gate, facing each other, and doped with a second conductive type dopant different from the first conductive type, and a second conductive type plug region formed on the substrate adjacent to third and fourth sides of the gate, connecting the first and second sides.

## Claims

### Claim 1

A rectifier device comprising:
a substrate doped with a first conductive type, the substrate having an active region and a field region;
a second electrode on a bottom surface of the substrate;
a gate on the active region;
a gate insulating film between the gate and the substrate;
body regions in the substrate adjacent to first and second sides of the gate, facing each other, the body regions doped with a second conductive type dopant different from the first conductive type; and
a second conductive type plug region in the substrate adjacent to third and fourth sides of the gate, connecting the first and second sides.

### Claim 2 (depends on 1)

The rectifier device of claim 1, wherein the body regions comprise a first body region and a second body region on a bottom surface of the first body region.

### Claim 3 (depends on 1)

The rectifier device of claim 1, wherein the plug region is doped in higher impurity concentrations than the body region.

### Claim 4 (depends on 1)

The rectifier device of claim 1, wherein the plug region is overlapped with the third side and fourth side of the gate.

### Claim 5 (depends on 1)

The rectifier device of claim 1, further comprising a first electrode electrically connecting the body regions, the plug region, and the gate.

### Claim 6 (depends on 1)

The rectifier device of claim 1, further comprising a drain region provided in the body regions and doped with a dopant of the first conductive type.

### Claim 7 (depends on 6)

The rectifier device of claim 6, further comprising a first electrode electrically connecting the drain region, the plug region, and the gate.

### Claim 8 (depends on 1)

The rectifier device of claim 1, further comprising a second conductive type guard-ring region surrounding the active region.

### Claim 9 (depends on 8)

The rectifier device of claim 8, wherein the guard-ring region and the plug region are connected to each other.

### Claim 10 (depends on 8)

The rectifier device of claim 8, further comprising a surrounding gate on the guard-ring region.

### Claim 11 (depends on 10)

The rectifier device of claim 10, further comprising a first electrode electrically connecting the guard-ring region, the surrounding gate, the gate, the plug region, and the body region.

### Claim 12 (depends on 10)

The rectifier device of claim 10, wherein both sides of the surrounding gate, facing each other, are extended toward the guard-ring region.

### Claim 13 (depends on 10)

The rectifier device of claim 10, wherein the gates are connected in the second direction and the gates and the surrounding gate are connected to one another.