# US 2014/0197441 A1 · Semiconductor light emitting element and illumination device comprising the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197441 A1 - Document ID: US20140197441A1 - Status: Published application - Kind: A1 - Application number: 14/218,944 - Filed: 2014-03-18 - Published: 2014-07-17 - Earliest claimed: 2012-05-29 - Assignees: Formosa Epitaxy Incorporation - Applicants: Formosa Epitaxy Incorporation - Inventors: Zhi-Ting Ye; Fen-Ren Chien; Shyi-Ming Pan - Web page: https://patentgrep.com/patent/US20140197441A1 ## CPC - F21V 21/14: Adjustable mountings - F21K 9/232: specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb - F21V 3/02: characterised by the shape - F21V 17/10: characterised by specific fastening means or way of fastening (F21V17/02 - F21V17/08 take precedence) - F21V 21/00: Supporting, suspending, or attaching arrangements for lighting devices (F21V17/00, F21V19/00 take precedence; arrangement of signalling or lighting devices, the mounting or supporting thereof or circuits therefor, for vehicles in general B60Q, stands for supporting apparatus or articles in general F16M11/00); Hand grips - F21V 23/06: the elements being coupling devices {, e.g. connectors} - F21V 29/85: characterised by the material (liquid coolants F21V29/56) - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/8506: {Containers} - H10H 20/851: Wavelength conversion means - H10H 20/8515: {not being in contact with the bodies} - H10H 20/8516: {having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient} - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10W 90/00: Package configurations - F21Y 2107/00: Light sources with three-dimensionally disposed light-generating elements - F21Y 2115/10: Light-emitting diodes [LED] - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10W 72/01515: {Forming coatings} - H10W 72/07251: {characterised by changes in properties of the bump connectors during connecting} - H10W 72/075: {of bond wires} - H10W 72/07554: {changes in dispositions} - H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps - H10W 72/227: {Multiple bumps having different sizes} - H10W 72/237: {Multiple bump connectors having different shapes} - H10W 72/536: {the connected ends being ball-shaped} - H10W 72/5363: {the connected ends being wedge-shaped} - H10W 72/547: {Dispositions of multiple bond wires} - H10W 72/5524: {comprising aluminium [Al]} - H10W 72/5525: {comprising copper [Cu]} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 72/931: {Shapes of bond pads} - H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/753: {between laterally-adjacent chips} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - F21V: FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR - F21K: NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - F21Y: INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED ## Abstract A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base. ## Claims ### Claim 1 A semiconductor light emitting element, comprising: a transparent substrate, having a support surface and a second main surface disposed opposite to each other; a light emitting diode (LED) structure disposed on the support surface, a first main surface, where light emitted from, being formed by the LED structure and at least a part of the support surface without the LED structure, and at least a part of the light emitted from the LED structure may pass through the transparent substrate and emerge from the second main surface; and an optical unit disposed on the first main surface, the optical unit comprising a covering side facing the transparent substrate, and a light dispersion side corresponding to the covering surface; wherein the optical unit further comprises at least one optical structure disposed on the light dispersion side to disperse light received from the covering side to different directions corresponding to wavelength of the light. ### Claim 2 (depends on 1) The semiconductor light emitting element of claim 1, further comprising: a wavelength conversion layer sandwiched by the optical unit and the transparent substrate, wherein a surface of the covering side of the optical unit is parallel to a corresponding surface of the wavelength conversion layer. ### Claim 3 (depends on 1) The semiconductor light emitting element of claim 1, wherein the optical unit further comprises a first dispersion portion and a second dispersion portion, and the first dispersion portion and the second dispersion portion cover the first main surface and the second main surface of the transparent substrate respectively. ### Claim 4 (depends on 3) The semiconductor light emitting element of claim 3, wherein the optical unit further comprises a connection portion connected between the first dispersion portion and the second dispersion portion. ### Claim 5 (depends on 4) The semiconductor light emitting element of claim 4, wherein a surface of the connection portion facing a side surface of the transparent substrate comprises a recess. ### Claim 6 (depends on 5) The semiconductor light emitting element of claim 5, wherein a section view of the recess of the connection portion comprises a recess angle ranged from 70 to 140 degrees. ### Claim 7 (depends on 6) The semiconductor light emitting element of claim 6, wherein the recess angle may be equal or close to 90 degrees. ### Claim 8 (depends on 4) The semiconductor light emitting element of claim 4, wherein the connection portion of the optical unit comprises at least one optical structure disposed on a surface extending from a light dispersion side of the first dispersion portion or the second dispersion portion. ### Claim 9 (depends on 1) The semiconductor light emitting element of claim 1, wherein a section view of the optical structure is shaped like a triangle and comprises a tip angle ranged from 30 to 140 degrees. ### Claim 10 (depends on 8) The semiconductor light emitting element of claim 8, wherein a section view of the optical structure is shaped like triangle and comprises a tip angle ranged from 50 to 140 degrees. ### Claim 11 (depends on 10) The semiconductor light emitting element of claim 10, wherein the tip angle may be equal or close to 70 degrees. ### Claim 12 (depends on 1) The semiconductor light emitting element of claim 1, wherein an amount of the optical structure is more than 1 and the optical structures are disposed in an array arrangement, an interlaced arrangement or a concentric arrangement. ### Claim 13 (depends on 5) The semiconductor light emitting element of claim 5, wherein the connection portion comprises a convex portion. ### Claim 14 (depends on 13) The semiconductor light emitting element of claim 13, wherein a curvature radius of the convex portion may be ranged from 0.01 to 10 mm. ### Claim 15 (depends on 14) The semiconductor light emitting element of claim 14, wherein the curvature radius of the convex portion may be equal or close to 3 mm. ### Claim 16 (depends on 2) The semiconductor light emitting element of claim 2, wherein at least part of the optical unit directly contacts the wavelength conversion layer. ### Claim 17 (depends on 2) The semiconductor light emitting element of claim 2, wherein a distance between the covering side of the optical unit and the wavelength conversion layer is ranged from 0 to 2 mm. ### Claim 18 (depends on 17) The semiconductor light emitting element of claim 17, wherein the distance between the covering side of the optical unit and the wavelength conversion layer is equal or close to 0.2 mm. ### Claim 19 (depends on 4) The semiconductor light emitting element of claim 4, wherein a distance between the connection portion of the optical unit and the side surface of the transparent substrate is ranged from 0 to 2 mm. ### Claim 20 (depends on 19) The semiconductor light emitting element of claim 19, wherein the distance between the connection portion of the optical unit and the side surface of the transparent substrate is equal or close to 0.2 mm. ### Claim 21 (depends on 1) The semiconductor light emitting element of claim 1, wherein at least part of the optical unit directly contacts the LED structure. ### Claim 22 (depends on 1) The semiconductor light emitting element of claim 1, wherein a distance between the covering side of the optical unit and the LED structure is ranged from 0 to 2 mm. ### Claim 23 (depends on 1) The semiconductor light emitting element of claim 1, wherein the optical structure is shaped like a pyramid. ### Claim 24 (depends on 1) An illumination device, comprising: a semiconductor light emitting element of claim 1; and a crystal member, disposed near the semiconductor light emitting element and received light emitted from the semiconductor light emitting element. ### Claim 25 (depends on 24) An illumination device of claim 24, wherein a distance between the semiconductor light emitting element and the crystal member is ranged from 0 to 20 cm. ### Claim 26 A semiconductor light emitting element, comprising: a cube-shaped light emitting unit; and an optical unit disposed on at least one of light emitting surfaces of the cube-shaped light emitting unit, the optical unit comprising a covering side facing the cube-shaped light emitting unit, and a light dispersion side corresponding to the covering surface; wherein the optical unit further comprises at least one optical structure disposed on the light dispersion side to disperse light received from the covering side to different directions corresponding to wavelength of the light. ### Claim 27 (depends on 26) The semiconductor light emitting element of claim 26, wherein the cube-shaped light emitting unit comprises at least two light emitting surfaces opposite to each other, the optical unit further comprises a first dispersion portion and a second dispersion portion, and the first dispersion portion and the second dispersion portion cover the light emitting surfaces of cube-shaped light emitting unit respectively.