# US 2014/0197435 A1 · Optoelectronic Semiconductor Chip

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- Number: US 2014/0197435 A1
- Document ID: US20140197435A1
- Status: Published application
- Kind: A1
- Application number: 14/122,134
- Filed: 2012-04-26
- Published: 2014-07-17
- Earliest claimed: 2011-05-25
- Assignees: OSRAM Opto Semiconductors GmbH
- Applicants: Osram Opto Semiconductors GmbH
- Inventors: Markus Maute; Karl Engl; Sebastian Taeger; Robert Walter; Johannes Stocker
- Web page: https://patentgrep.com/patent/US20140197435A1

## CPC

- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/8312: {extending at least partially through the bodies}
- H10H 20/833: Transparent materials
- H10H 20/856: Reflecting means
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/835: {Reflective materials}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

An optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a minor layer, the TCO-layer being arranged between the n-side of the semiconductor body and the minor layer.

## Claims

### Claim at position 1

1-12. (canceled)

### Claim 13

An optoelectronic semiconductor chip comprising:
a semiconductor body of semiconductor material comprising a p-side, an n-side and an active layer between the p-side and the n-side, the active layer configured to generate radiation during operation;
a p-contact layer electrically contacting the p-side of the semiconductor body; and
an n-contact layer electrical contacting the n-side of the semiconductor body, wherein the n-contact layer contains a transparent conductive oxide (TCO) layer and a minor layer, the TCO layer being arranged between the n-side of the semiconductor body and the minor layer.

### Claim 14 (depends on 13)

The optoelectronic semiconductor chip according to claim 13, wherein the minor layer contains silver.

### Claim 15 (depends on 13)

The optoelectronic semiconductor chip according to claim 13, wherein the p-contact layer and the n-contact layer are arranged on the same side of the semiconductor body.

### Claim 16 (depends on 15)

The optoelectronic semiconductor chip according to claim 15,
wherein the p-contact layer directly adjoins the p-side of the semiconductor body,
wherein the n-contact layer is arranged on the side of the p-contact layer remote from the semiconductor body, and
wherein the chip further comprises an electrically insulating layer arranged between the p-contact layer and the n-contact layer.

### Claim 17 (depends on 15)

The optoelectronic semiconductor chip according to claim 15, wherein the n-contact layer passes to the n-side through the p-contact layer and through the p-side of the semiconductor body.

### Claim 18 (depends on 17)

The optoelectronic semiconductor chip according to claim 17,
wherein the mirror layer passes through a hole in the p-side of the semiconductor body; and
wherein the TCO layer is arranged on the hole.

### Claim 19 (depends on 13)

The optoelectronic semiconductor chip according to claim 13, wherein the TCO layer comprises zinc oxide.

### Claim 20 (depends on 13)

The optoelectronic semiconductor chip according to claim 13, wherein the TCO layer comprises indium tin oxide.

### Claim 21 (depends on 13)

The optoelectronic semiconductor chip according to claim 13, wherein the TCO layer comprises a material selected from the group consisting of tin oxide, aluminum zinc oxide, aluminum tin oxide, gallium tin oxide, gallium zinc oxide or indium zinc oxide

### Claim 22 (depends on 13)

The optoelectronic semiconductor chip according to claim 13, wherein the TCO layer has a thickness of greater than 0.5 nm.

### Claim 23 (depends on 22)

The optoelectronic semiconductor chip according to claim 22, wherein the TCO layer has a thickness in a range between 15 nm and 25 nm, inclusive.

### Claim 24 (depends on 13)

The optoelectronic semiconductor chip according to claim 13, wherein the semiconductor body comprises oblique side faces.

### Claim 25 (depends on 13)

The optoelectronic semiconductor chip according to claim 13, wherein the semiconductor body comprises GaN.

### Claim 26 (depends on 13)

The optoelectronic semiconductor chip according to claim 13,
wherein the n-contact layer passes through the p-side by means of a hole and ends in the n-side of the semiconductor body; and
wherein the TCO layer is arranged in the hole between the n-side of the semiconductor body and the mirror layer.

### Claim 27 (depends on 26)

The optoelectronic semiconductor chip according to claim 26,
wherein the n-contact layer passes through the p-side by means of a plurality of holes and ends in the n-side of the semiconductor body; and
wherein the TCO layer is arranged in the plurality of holes between the n-side of the semiconductor body and the mirror layer.

### Claim 28

An optoelectronic semiconductor chip comprising:
a semiconductor body of semiconductor material;
a p-contact layer; and
an n-contact layer;
wherein the semiconductor body comprises an active layer for generating radiation during operation;
wherein the semiconductor body comprises a p-side and an n-side, the active layer being arranged between the p-side and the n-side;
wherein the p-contact layer electrically contacts the p-side of the semiconductor body;
wherein the n-contact layer electrically contacts the n-side of the semiconductor body;
wherein the n-contact layer contains a TCO layer and a minor layer, wherein the TCO layer is arranged between the n-side of the semiconductor body and the mirror layer;
wherein the mirror layer contains silver;
wherein the n-contact layer passes through the p-side by means of a hole and ends in the n-side of the semiconductor body; and
wherein the TCO layer is arranged in the hole between the n-side of the semiconductor body and the mirror layer.

### Claim 29 (depends on 28)

The optoelectronic semiconductor chip according to claim 28, wherein the n-contact passes through the p-side by means of a plurality of holes, each of the holes ending in the n-side of the semiconductor body, and wherein the TCO layer is arranged in the plurality of holes between the n-side of the semiconductor body and the mirror layer.

### Claim 30 (depends on 28)

The optoelectronic semiconductor chip according to claim 28, wherein the TCO layer comprises zinc oxide or indium tin oxide.

### Claim 31 (depends on 28)

The optoelectronic semiconductor chip according to claim 28, wherein the TCO layer has a thickness in a range between 15 nm and 25 nm, inclusive.