# US 2014/0197434 A1 · Light emitting diode device and method for manufacturing heat dissipation substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197434 A1 - Document ID: US20140197434A1 - Status: Published application - Kind: A1 - Application number: 13/841,858 - Filed: 2013-03-15 - Published: 2014-07-17 - Earliest claimed: 2013-01-11 - Assignees: Ecocera Optronics Co., Ltd. - Applicants: Ecocera Optronics Co., Ltd. - Inventors: Hung-Pin Lee - Web page: https://patentgrep.com/patent/US20140197434A1 ## CPC - H10H 20/8581: {characterised by their material} - H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps - H10W 72/884: {Die-attach connectors and bond wires} - Y10T 29/49155: Manufacturing circuit on or in base - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract The light emitting diode (LED) device includes a substrate formed with at least one electrode; an LED chip disposed on the substrate, and formed with at least one solder pad; at least one wire electrically connected between the solder pad and the electrode; and a fluorescent material layer covering the LED chip. Thermal conductivity of the substrate is 80˜120 W/mK and a color rendering index of the LED device under correlated color temperatures 2600K˜3700K is greater than 90. ## Claims ### Claim 1 A light emitting diode (LED) device comprising: a substrate including at least an electrode; an LED chip disposed on the substrate and including at least a solder pad; at least a wire electrically connected between the solder pad and the electrode; and a fluorescent material layer covering the LED chip; wherein thermal conductivity of the substrate is 80˜120 W/mK, and a color rendering index of the LED device under correlated color temperatures 2600K˜3700K is greater than 90. ### Claim 2 (depends on 1) The LED device of claim 1, wherein the solder pad is located on a single side or different sides of the LED chip. ### Claim 3 (depends on 1) The LED device of claim 1, wherein the substrate is made of aluminum nitride or silicon carbide, and thermal conductivity of the substrate is 80˜120 W/mK. ### Claim 4 (depends on 1) The LED device of claim 1, wherein the LED chip is adhered on the substrate with an adhesive. ### Claim 5 (depends on 1) The LED device of claim 1, wherein the substrate includes one selected from a group consisting of a metal substrate, a ceramic substrate, a direct bond copper (DBC) ceramic substrate, a composite material substrate and a semiconductor substrate. ### Claim 6 (depends on 1) The LED device of claim 1, further comprising a covering body having a seat covering the substrate, the LED chip, the wire and the fluorescent material layer. ### Claim 7 A light emitting diode (LED) device comprising: an LED chip, having a first side and a second side opposite thereto; a first electrode and a second electrode respectively formed on a first area and a second area of the first side; a first solder pad and a second solder pad, located on a surface of a substrate, wherein the first solder pad is electrically connected to the first electrode and the second solder pad is electrically connected to the second electrode; a first pad and a second pad located on another surface of the substrate; a first conductive rod located in the substrate and connecting the first solder pad and the first pad; a second conductive rod located in the substrate and connecting the second solder pad and the second pad; and a fluorescent material layer covering the second side of the LED chip; wherein thermal conductivity of the substrate is 80˜120 W/mK, and a color rendering index of the LED device under correlated color temperatures 2600K˜3700K is greater than 90. ### Claim 8 (depends on 7) The LED device of claim 7, wherein the substrate includes one selected from a group consisting of a metal substrate, a ceramic substrate, a direct bond copper (DBC) ceramic substrate, a composite material substrate and a semiconductor substrate. ### Claim 9 (depends on 7) The LED device of claim 7, wherein the substrate is made of aluminum nitride or silicon carbide. ### Claim 10 (depends on 7) The LED device of claim 7, wherein the thermal conductivity of the substrate is 80˜100 W/mK. ### Claim 11 A method for manufacturing a heat dissipation substrate of a lighting element, comprising steps of: a) providing a substrate with thermal conductivity of 80˜120 W/mK; b) performing a roughening process to the substrate; and c) forming a circuit pattern on the substrate to serve as the heat dissipation substrate for the lighting element. ### Claim 12 (depends on 11) The method of claim 11, wherein the roughening process includes an etching process. ### Claim 13 (depends on 12) The method of claim 12, wherein the etching process includes a step of using an alkaline liquid to etch the substrate. ### Claim 14 (depends on 11) The method of claim 11, wherein the substrate is made of aluminum nitride or silicon carbide. ### Claim 15 (depends on 11) The method of claim 11, wherein the thermal conductivity of the substrate is 80˜100 W/mK.