# US 2014/0197430 A1 · Substrate free led package > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197430 A1 - Document ID: US20140197430A1 - Status: Published application - Kind: A1 - Application number: 14/214,202 - Filed: 2014-03-14 - Published: 2014-07-17 - Earliest claimed: 2012-09-14 - Assignees: Bridgelux, Inc. - Applicants: Bridgelux, Inc. - Inventors: Mike Kwon; Gerry Keller; Scott West; Tao Tong; Babak Imangholi - Web page: https://patentgrep.com/patent/US20140197430A1 ## CPC - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10H 20/01: Manufacture or treatment - H10H 20/8506: {Containers} - H10H 20/852: Encapsulations - H10H 20/853: characterised by their shape - H10H 20/855: Optical field-shaping means, e.g. lenses - H10H 20/856: Reflecting means - H10W 70/09: extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs - H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers} - H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) - H10H 20/036: {of packages} - H10H 20/0362: {of encapsulations} - H10H 20/0363: {of optical field-shaping means} - H10W 72/0198: {batch processes} - H10W 72/9413: {on encapsulations} - H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)} - H10W 90/10: Configurations of laterally-adjacent chips - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A method of fabricating a substrate free light emitting diode (LED), includes arranging LED dies on a tape to form an LED wafer assembly, molding an encapsulation structure over at least one of the LED dies on a first side of the LED wafer assembly, removing the tape, forming a dielectric layer on a second side of the LED wafer assembly, forming an oversized contact region on the dielectric layer to form a virtual LED wafer assembly, and singulating the virtual LED wafer assembly into predetermined regions including at least one LED. The tape can be a carrier tape or a saw tape. Several LED dies can also be electrically coupled before the virtual LED wafer assembly is singulated into predetermined regions including at the electrically coupled LED dies. ## Claims ### Claim at position 1 1-21. (canceled) ### Claim 22 A method of fabricating a substrate free light emitting diode (LED), comprising: arranging a plurality of LED dies on a tape to form an LED wafer assembly; molding an encapsulation structure over at least one of the plurality of LED dies on a first side of the LED wafer assembly; removing the tape; and singulating the LED wafer assembly into predetermined regions comprising at least one LED. ### Claim 23 (depends on 22) The method of claim 22, wherein the arranging of the plurality of LED dies on the tape comprises arranging the plurality of LED dies on a carrier tape. ### Claim 24 (depends on 23) The method of claim 23, wherein the plurality of LED dies are arranged on a carrier tape using a pick and place procedure. ### Claim 25 (depends on 23) The method of claim 23, further comprising, before the arranging of the plurality of LED dies on the carrier tape: disposing a wafer having the plurality of LED dies on a saw tape; singulating the plurality of LED dies by cutting the wafer completely through and partially cutting the saw tape to a depth less than a thickness of the saw tape; and expanding the saw tape to increase spacing between the singulated plurality of LED dies. ### Claim 26 (depends on 22) The method of claim 22, wherein the arranging the plurality of LED dies on the tape comprises arranging the plurality of LED dies on a saw tape. ### Claim 27 (depends on 26) The method of claim 26, wherein the arranging the plurality of LED dies on the saw tape comprises: disposing a wafer having the plurality of LED dies on the saw tape; singulating the plurality of LED dies by cutting the wafer completely through and partially cutting the saw tape to a depth less than the a thickness of the saw tape; and expanding the saw tape to increase spacing between the singulated plurality of LED dies. ### Claim 28 (depends on 22) The method of claim 22, wherein the molding of the encapsulation structure comprises molding a phosphor loaded silicon material over the plurality of LED dies. ### Claim 29 (depends on 22) The method of claim 22, wherein the molding of the encapsulation structure comprises molding a lens selected from the group consisting of a flat lens, a dome lens, or a Fresnel lens. ### Claim 30 (depends on 22) The method of claim 22, further comprising forming a dielectric layer on a second side of the LED wafer assembly. ### Claim 31 (depends on 22) The method of claim 22, further comprising: forming a dielectric layer on a second side of the LED wafer assembly; and forming an oversized contact region on the dielectric layer. ### Claim 32 A method of fabricating a substrate free light emitting diode (LED), comprising: arranging a plurality of LED dies on a tape to form an LED wafer assembly, the plurality of LED dies comprising die contacts; molding an encapsulation structure over at least one of the plurality of LED dies on a first side of the LED wafer assembly; removing the tape to expose the die contacts; electrically coupling at least one die contact from a first die with at least one die contact from a second die; and singulating the LED wafer assembly into predetermined regions comprising at least the electrically coupled first die and second die. ### Claim 33 (depends on 32) The method of claim 32, wherein the arranging of the plurality of LED dies on the tape comprises arranging the plurality of LED dies on a carrier tape. ### Claim 34 (depends on 33) The method of claim 33, wherein the plurality of LED dies are arranged on the carrier tape using a pick and place procedure. ### Claim 35 (depends on 33) The method of claim 33, further comprising, before the arranging of the plurality of LED dies on the carrier tape: disposing a wafer having the plurality of LED dies on the saw tape; singulating the plurality of LED dies by cutting the wafer completely through and partially cutting the saw tape to a depth less than a thickness of the saw tape; and expanding the saw tape to increase spacing between the singulated plurality of LED dies. ### Claim 36 (depends on 32) The method of claim 32, wherein the arranging the plurality of LED dies on the tape comprises arranging the plurality of LED dies on a saw tape. ### Claim 37 (depends on 36) The method of claim 36, wherein the arranging the plurality of LED dies on a saw tape comprises: disposing a wafer having the plurality of LED dies on the saw tape; singulating the plurality of LED dies by cutting the wafer completely through and partially cutting the saw tape to a depth less than the a thickness of the saw tape; and expanding the saw tape to increase spacing between the singulated plurality of LED dies. ### Claim 38 (depends on 32) The method of claim 32, further comprising: forming a dielectric layer on a second side of the LED wafer assembly; and forming an oversized contact region on the dielectric layer. ### Claim 39 A substrate free light emitting diode (LED), comprising: an LED die having at least one contact; a dielectric layer formed over at least one of the LED dies on a first side of the LED; an oversized contact region on the dielectric layer, the oversized contact region electrically coupled to the at least one contact; and an encapsulation structure on a second side of the LED die. ### Claim 40 (depends on 39) The substrate free LED of claim 39, wherein the dielectric layer comprises a Distributed Bragg Reflector (DBR) comprising a high index of refraction dielectric material adjacent to a low-index of refraction dielectric material. ### Claim 41 (depends on 39) The substrate free LED of claim 39, wherein the oversized contact region comprises a fan out structure. ### Claim 42 (depends on 39) The substrate free LED of claim 39, wherein the oversized contact region has a portion that extends to an end of the LED die through the dielectric layer. ### Claim 43 (depends on 39) The substrate free LED of claim 39, wherein the oversized contact region comprises at least one of Al, Ag, Rh, Pd, Cu, Au, Cr, Ti, W, and Ni. ### Claim 44 (depends on 39) The substrate free LED of claim 39, wherein the LED die comprises at least one of a vertical LED structure with electrical contacts on the same side, lateral LED structure, flip chip, and thin-film LED structure. ### Claim 45 A substrate free light emitting diode (LED), comprising: a plurality of LED dies, each die having at least one contact; a dielectric layer formed over at least two of the LED dies on a first side of the LED; an oversized contact region on the dielectric layer, the oversized contact region electrically coupled to the at least one contact for each of the two dies; and an encapsulation structure on a second side of the LED die, the encapsulation structure covering the at least two LED dies, wherein the at least two LED dies are electrically coupled.