# US 2014/0197426 A1 · Light emitting diode chip structure and light emitting diode element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197426 A1 - Document ID: US20140197426A1 - Status: Published application - Kind: A1 - Application number: 13/856,872 - Filed: 2013-04-04 - Published: 2014-07-17 - Earliest claimed: 2013-01-16 - Assignees: Lextar Electronics Corporation - Applicants: Lextar Electronics Corporation - Inventors: Fu-Shin Chen; Li-Cheng Yang; Yu-Chun Lee - Web page: https://patentgrep.com/patent/US20140197426A1 ## CPC - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/851: Wavelength conversion means - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A light emitting diode chip structure includes a substrate, a mesa type light emitting diode structure, and an electroluminescent layer. The mesa type light emitting diode structure includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The mesa type light emitting diode structure is formed on the substrate. The first semiconductor layer is formed on the substrate. The light emitting layer is formed on a portion of the first semiconductor layer, and a portion of the first semiconductor layer is uncovered. The second semiconductor layer is formed on the light emitting layer. The electroluminescent layer is formed on the second semiconductor layer. Furthermore, a light emitting diode element is also disclosed herein. ## Claims ### Claim 1 A light emitting diode chip structure, comprising: a substrate; a mesa type light emitting diode structure, formed on the substrate, comprising: a first semiconductor layer disposed on the substrate; a light emitting layer disposed on a portion of the first semiconductor layer, wherein a portion of the first semiconductor layer is uncovered; and a second semiconductor layer disposed on the light emitting layer; and an electroluminescent layer disposed on the second luminescent layer. ### Claim 2 (depends on 1) The light emitting diode chip structure according to claim 1, wherein the light transmittance and the light reflectance of the electroluminescent layer are changed based on the change of a variable voltage applied onto the electroluminescent layer. ### Claim 3 (depends on 2) The light emitting diode chip structure according to claim 2, wherein when the variable voltage applied onto the electroluminescent layer is gradually increased or decreased, the light transmittance is gradually decreased or increased, but the change of the light reflectance is contrary to that of the light transmittance. ### Claim 4 (depends on 3) The light emitting diode chip structure according to claim 3, further comprising a first electrode and a second electrode, which are respectively disposed on the first semiconductor layer and the second semiconductor layer, so that a variable first voltage is applied between the first semiconductor layer and the second semiconductor layer through the first electrode and the second electrode. ### Claim 5 (depends on 4) The light emitting diode chip structure according to claim 4, wherein since the electroluminescent layer is connected in series with the first semiconductor layer and the second semiconductor layer such that the variable first voltage is applied onto the electroluminescent layer. ### Claim 6 (depends on 4) The light emitting diode chip structure according to claim 4, further comprising an insulating layer, wherein the insulating layer is located between the second semiconductor layer and the electroluminescent layer, and the light emitting diode chip structure further comprises a third electrode and a fourth electrode which are disposed on the electroluminescent layer. ### Claim 7 (depends on 6) The light emitting diode chip structure according to claim 6, wherein a variable second voltage is applied onto the electroluminescent layer through the third electrode and the fourth electrode. ### Claim 8 (depends on 7) The light emitting diode chip structure according to claim 7, wherein the variable first voltage is converted into the variable second voltage through a variable resistor. ### Claim 9 (depends on 1) The light emitting diode chip structure according to claim 1, wherein the electroluminescent layer further covers the second semiconductor layer, the light emitting layer and the first semiconductor layer which are disposed on the side face of the mesa type light emitting diode structure. ### Claim 10 A light emitting diode element, comprising: a light emitting diode chip configured for emitting a first light with a light wavelength λ1; and a wavelength transformation substance configured for transforming the first light with the light wavelength λ1 into a second light with a light wavelength λ2 after the wavelength transformation substance is irradiated by the first light with the light wavelength λ1, wherein the light emitting diode chip comprises: a substrate; a mesa type light emitting diode structure formed on the substrate, comprising: a first semiconductor layer disposed on the substrate; a light emitting layer disposed on a portion of the first semiconductor layer, wherein a portion of the first semiconductor layer is uncovered; and a second semiconductor layer disposed on the light emitting layer; and a electroluminescent layer disposed on the second luminescent layer. ### Claim 11 (depends on 10) The light emitting diode element according to claim 10, wherein the light transmittance and the light reflectance of the electroluminescent layer are changed based on the change of the variable voltage applied onto the electroluminescent layer. ### Claim 12 (depends on 11) The light emitting diode element according to claim 11, wherein when the voltage applied onto the electroluminescent layer is gradually increased or decreased, the light transmittance is gradually decreased or increased, but the change of the light reflectance is contrary to that of the light transmittance. ### Claim 13 (depends on 12) The light emitting diode element according to claim 12, further comprising a first electrode and a second electrode, which are respectively disposed on the first semiconductor layer and the second semiconductor layer, so that the variable first voltage is applied between the first semiconductor layer and the second semiconductor layer through the first electrode and the second electrode. ### Claim 14 (depends on 13) The light emitting diode element according to claim 13, wherein since the electroluminescent layer is connected in series with the first semiconductor layer and the second semiconductor layer such that the variable first voltage is applied onto the electroluminescent layer. ### Claim 15 (depends on 13) The light emitting diode element according to claim 13, further comprising an insulating layer, wherein the insulating layer is located between the second semiconductor layer and the electroluminescent layer, and the light emitting diode chip structure further comprises a third electrode and a fourth electrode which are disposed on the electroluminescent layer. ### Claim 16 (depends on 15) The light emitting diode element according to claim 15, wherein a variable second voltage is applied onto the electroluminescent layer through the third electrode and the fourth electrode. ### Claim 17 (depends on 16) The light emitting diode element according to claim 16, wherein the variable first voltage is converted to the variable second voltage through a variable resistor. ### Claim 18 (depends on 10) The light emitting diode element according to any one of claims 10, wherein the first light with the light wavelength λ1 of the light emitting diode chip is within the wavelength range of ultraviolet light or visible light. ### Claim 19 (depends on 18) The light emitting diode element according to claim 18, wherein the wavelength transformation substance is selected from the group consisting of fluorescent powder, pigment, paint and a combination thereof. ### Claim 20 (depends on 19) The light emitting diode element according to claim 19, wherein the electroluminescent layer further covers the second semiconductor layer, the light emitting layer and the first semiconductor layer which are disposed on the side face of the mesa type light emitting diode structure.