# US 2014/0197424 A1 · Optoelectric device and method for manufacturing the same

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- Number: US 2014/0197424 A1
- Document ID: US20140197424A1
- Status: Published application
- Kind: A1
- Application number: 14/218,276
- Filed: 2014-03-18
- Published: 2014-07-17
- Earliest claimed: 2009-04-23
- Assignees: Koninklijke Philips Electronics N.V.; Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO
- Applicants: Koninklijke Philips Electronics N.V.; Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO
- Inventors: Herbert LIFKA; Peter VAN DE WEIJER; Antonius Maria Bernardus VAN MOL
- Web page: https://patentgrep.com/patent/US20140197424A1

## CPC

- H10K 71/60: Forming conductive regions or layers, e.g. electrodes
- H10F 55/18: {wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection}
- H10F 77/933: {for devices having potential barriers}
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10K 50/814: combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
- H10K 50/824: combined with auxiliary electrodes
- H10K 30/50: Photovoltaic [PV] devices
- H10K 59/32: Stacked devices having two or more layers, each emitting at different wavelengths
- H10K 59/50: OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
- H10K 59/60: OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A method for manufacturing an optoelectric device may include the steps of providing a layer of an optoelectric active material between a first electrode and a second electrode, providing a patterned electrically insulating layer structure at least one of said electrodes, the patterned electrically insulating layer structure having openings, providing an electrolyte in said openings, and depositing a metallic layer in said openings from the electrolyte by electroplating, wherein the electrolyte is formed by an ionic liquid.

## Claims

### Claim 1

Optoelectric device comprising:
a layer of an optoelectric active material between a first electrode and a second electrode;
a patterned electrically insulating layer structure on at least one of said electrodes, the patterned electrically insulating layer structure having openings; and
a metallic structure on the patterned electrically insulating layer structure that extends through the openings of the patterned electrically insulating layer to the at least one of the electrodes, therewith directly contacting said at least one of the electrodes.

### Claim 2 (depends on 1)

Optoelectric device according to claim 1, comprising a stack with a further layer of an optoelectric active material between a third electrode and a fourth electrode, said stack being arranged on the patterned electrically insulating layer structure provided with the metallic structure.

### Claim 3 (depends on 2)

Optoelectric device according to claim 2, wherein both the layer of an optoelectric active material and the further layer of an optoelectric active material is a light-emitting layer.

### Claim 4 (depends on 2)

Optoelectric device according to claim 2, wherein the layer of an optoelectric active material is a light-emitting layer and the further layer of an optoelectric active material is a photo-voltaic layer.

### Claim 5 (depends on 2)

Optoelectric device according to claim 2, wherein the layer of an optoelectric active material is a light-emitting layer and the further layer of an optoelectric active material is an electrochromic layer.