# US 2014/0197423 A1 · Substrate structure for manufacturing light emitting diode and method for manufacturing light emitting diode

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- Number: US 2014/0197423 A1
- Document ID: US20140197423A1
- Status: Published application
- Kind: A1
- Application number: 13/932,675
- Filed: 2013-07-01
- Published: 2014-07-17
- Earliest claimed: 2013-01-16
- Assignees: Lextar Electronics Corporation
- Applicants: Lextar Electronics Corporation
- Inventors: Jui-Yi Chu; Shih-Pu Yang
- Web page: https://patentgrep.com/patent/US20140197423A1

## CPC

- H10H 20/018: {Bonding of wafers}
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

The invention provides a substrate structure for manufacturing a light-emitting diode and a method for manufacturing the light-emitting diode. The substrate structure comprises a substrate having a first surface and a second surface opposite to the first surface; and a plurality of grooving structure formed on the first surface of the substrate. In which, the light-emitting diode is formed on the first surface of the substrate.

## Claims

### Claim 1

A substrate structure for manufacturing a light-emitting diode, comprising:
a substrate having a first surface and a second surface opposite to the first surface; and
a plurality of notch structures formed on the first surface of the substrate,
wherein the light-emitting diode is formed on the first surface of the substrate.

### Claim 2 (depends on 1)

The substrate structure of claim 1, wherein the notch structures expand to the edges of the substrate to form a plurality of openings.

### Claim 3 (depends on 1)

The substrate structure of claim 1, wherein the notch structures are parallel with each other, or crisscrossed as a network.

### Claim 4 (depends on 1)

The substrate structure of claim 1, wherein the cross section of the notch structures is rectangle, semicircle, arc, triangle, trapezoid, or a combination thereof.

### Claim 5 (depends on 1)

The substrate structure of claim 1, wherein the depth of the notch structure is in a range of 0.1 μm to 50 μm.

### Claim 6 (depends on 1)

The substrate structure of claim 1, wherein the material of the substrate is selected from the group consisting of sapphire, silicon, silicon carbide (SiC), lithium aluminate (LiAlO2), lithium gallate (LiGaO2), zinc oxide (ZnO), gallium arsenide (GaAs), gallium phosphide (GaP), and a combination thereof.

### Claim 7

A method for manufacturing a light-emitting diode, comprising the steps of:
providing a first substrate having a first surface and a second surface opposite to the first surface;
forming a plurality of notch structures in the first surface of the first substrate;
forming a light-emitting diode structure on the first surface of the first substrate;
forming a second substrate parallel to the first substrate on the surface of the light-emitting diode structure; and
performing a lift-off process to separate the first substrate and the light-emitting diode structure.

### Claim 8 (depends on 7)

The method of claim 7, wherein the step of forming the light-emitting diode structure comprises:
forming an N-type semiconductor layer on the first substrate;
forming a light-emitting layer on the N-type semiconductor layer;
forming a P-type semiconductor layer on the light-emitting layer; and
forming a conductive layer on the P-type semiconductor layer.

### Claim 9 (depends on 7)

The method of claim 7, further comprising the step of forming a buffer layer between the first surface of the first substrate and the light-emitting diode structure.

### Claim 10 (depends on 9)

The method of claim 9, wherein the N-type semiconductor layer, the light-emitting layer, the P-type semiconductor layer and the buffer layer are formed by an epitaxy process.

### Claim 11 (depends on 9)

The method of claim 9, wherein the thickness of the buffer layer is equal to and less than 100 nm.

### Claim 12 (depends on 7)

The method of claim 7, wherein the notch structures are formed by a dry etching process or a wet etching process.

### Claim 13 (depends on 7)

The method of claim 7, wherein the notch structures expand to the edge of the first substrate to form a plurality of openings.

### Claim 14 (depends on 7)

The method of claim 7, wherein the notch structures are parallel with each other, or crisscrossed as a network.

### Claim 15 (depends on 7)

The method of claim 7, wherein the cross section of the notch structures is rectangle, semicircle, arc, triangle, trapezoid, or a combination thereof.

### Claim 16 (depends on 7)

The method of claim 7, wherein the depth of the notch structure is in a range of 0.1 μm to 50 μm.

### Claim 17 (depends on 7)

The method of claim 7, wherein the material of the substrate is selected from the group consisting of sapphire, silicon, silicon carbide (SiC), lithium aluminate (LiAlO2), lithium gallate (LiGaO2), zinc oxide (ZnO), gallium arsenide (GaAs), gallium phosphide (GaP), and a combination thereof.

### Claim 18 (depends on 7)

The method of claim 7, wherein the lift-off process is performed by a wet etching process.