# US 2014/0197420 A1 · Films of Nitrides of Group 13 Elements and Layered Body Including the Same

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- Number: US 2014/0197420 A1
- Document ID: US20140197420A1
- Status: Published application
- Kind: A1
- Application number: 14/167,667
- Filed: 2014-01-29
- Published: 2014-07-17
- Earliest claimed: 2011-08-10
- Assignees: NGK Insulators, Ltd.
- Applicants: Ngk Insulators, Ltd.
- Inventors: Makoto Iwai; Takayuki Hirao; Takashi Yoshino
- Web page: https://patentgrep.com/patent/US20140197420A1

## CPC

- H10H 20/825: containing nitrogen, e.g. GaN
- C30B 19/02: using molten solvents, e.g. flux
- C30B 29/38: Nitrides
- C30B 29/403: {AIII-nitrides}
- H10P 14/263: {using melted materials}
- H10P 14/2901: {Materials}
- H10P 14/2921: {being crystalline insulating materials}
- H10P 14/3216: {Nitrides}
- H10P 14/3416: {Nitrides}
- H10P 14/3442: {N-type}
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and a group 13 element under nitrogen containing atmosphere. The film 3 of a nitride of a group 13 element includes an inclusion distributed layer 3a in a region distant from an interface of the film of a nitride of group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3b, with the inclusion depleted. provided on the layer 3a.

## Claims

### Claim 1

A film of a nitride of a group 13 element, said film being grown on a seed crystal substrate by flux process from a melt comprising a flux and a group 13 element under a nitrogen containing atmosphere, said film comprising;
an inclusion distributed layer in a region distant by 50 μm or less from an interface of said film of a nitride of a group 13 element on the side of said seed crystal substrate, said layer comprising inclusions derived from components of said melt and;
an inclusion depleted layer with said inclusion depleted, said inclusion depleted layer being provided on said inclusion distributed layer.

### Claim 2 (depends on 1)

The film of a nitride of a group 13 element of claim 1, wherein the maximum area of said inclusion in said inclusion distributed layer is 60 μm2 or smaller, viewed in a cross section of said film of a nitride of a group 13 element.

### Claim 3 (depends on 1)

The film of a nitride of a group 13 element of claim 1, wherein said nitride of a group 13 element comprises gallium nitride, aluminum nitride or aluminum gallium nitride.

### Claim 4 (depends on 3)

The film of a nitride of a group 13 element of claim 3, wherein said nitride of a group 13 element comprises at least one of germanium, silicon and oxygen, and wherein said nitride is of n-type.

### Claim 5 (depends on 1)

The film of a nitride of a group 13 element of claim 1, wherein said seed crystal substrate comprises a single crystal substrate and a seed crystal film provided on said single crystal substrate.

### Claim 6 (depends on 1)

The film of a nitride of a group 13 element of claim 1, wherein a thickness of said inclusion depleted layer is 20 to 0.1 provided that a thickness of said inclusion distributed layer is 1.

### Claim 7 (depends on 1)

A film of a nitride of a group 13 element, obtained by removing said inclusion distributed layer from said film of a nitride of a group 13 element of claim 1.

### Claim 8 (depends on 1)

A layered body comprising a single crystal substrate, a seed crystal film formed on said substrate and said film of a nitride of a group 13 element of claim 1 formed on said seed crystal film.

### Claim 9 (depends on 1)

A layered body comprising a seed crystal film and said film of a nitride of a group 13 element of claim 1 formed on said seed crystal film.