# US 2014/0197407 A1 · Semiconductor device and method for manufacturing the same

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- Number: US 2014/0197407 A1
- Document ID: US20140197407A1
- Status: Published application
- Kind: A1
- Application number: 14/217,988
- Filed: 2014-03-18
- Published: 2014-07-17
- Earliest claimed: 2009-11-28
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei YAMAZAKI
- Web page: https://patentgrep.com/patent/US20140197407A1

## CPC

- H10D 30/6756: {Amorphous oxide semiconductors}
- H10D 30/025: {of vertical IGFETs (of VDMOS H10D30/0291; of vertical TFTs H10D30/0318)}
- H10D 30/0318: {of vertical TFTs}
- H10D 30/6728: {Vertical TFTs}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 62/402: {Amorphous materials}
- H10D 62/405: {Orientations of crystalline planes}
- H10D 62/80: characterised by the materials
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10H 20/8242: {characterised by the dopants}
- H10P 14/20: of semiconductor materials
- H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering
- H10P 14/3226: {Oxides}
- H10P 14/3234: {being oxide semiconducting materials (Group IIB-VIA semiconductors H10P14/3224)}
- H10P 14/3426: {Oxides}
- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- H10P 14/3802: {Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor.

## Claims

### Claim 1

(canceled)

### Claim 2

A semiconductor device comprising:
a transistor comprising:
a stacked body comprising:
a first oxide semiconductor film; and
a second oxide semiconductor film on and in contact with the first oxide semiconductor film;
a gate insulating film covering the first oxide semiconductor film and the second oxide semiconductor film; and
a gate electrode over the gate insulating film and facing at least a side surface of the second oxide semiconductor film,
wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium and zinc.

### Claim 3 (depends on 2)

The semiconductor device according to claim 2, wherein the gate electrode surrounds the side surface of the second oxide semiconductor film with the gate insulating film located therebetween.

### Claim 4 (depends on 2)

The semiconductor device according to claim 2, further comprising a first electrode and a second electrode,
wherein the first oxide semiconductor film is located over the first electrode,
wherein the second electrode is located over the second oxide semiconductor film, and
wherein the gate insulating film covers the first electrode and the second electrode.

### Claim 5 (depends on 2)

The semiconductor device according to claim 2, wherein a lower surface of the stacked body is larger than an upper surface of the stacked body.

### Claim 6 (depends on 2)

The semiconductor device according to claim 2, wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises gallium.

### Claim 7

A semiconductor device comprising:
a transistor comprising:
a stacked body comprising:
a first oxide semiconductor film; and
a second oxide semiconductor film on and in contact with the first oxide semiconductor film;
a gate insulating film covering the first oxide semiconductor film and the second oxide semiconductor film; and
a gate electrode over the gate insulating film and facing at least a side surface of the second oxide semiconductor film,
wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium and zinc, and
wherein the second oxide semiconductor film comprises a crystalline region.

### Claim 8 (depends on 7)

The semiconductor device according to claim 7, wherein the gate electrode surrounds the side surface of the second oxide semiconductor film with the gate insulating film located therebetween.

### Claim 9 (depends on 7)

The semiconductor device according to claim 7, further comprising a first electrode and a second electrode,
wherein the first oxide semiconductor film is located over the first electrode,
wherein the second electrode is located over the second oxide semiconductor film, and
wherein the gate insulating film covers the first electrode and the second electrode.

### Claim 10 (depends on 7)

The semiconductor device according to claim 7, wherein a lower surface of the stacked body is larger than an upper surface of the stacked body.

### Claim 11 (depends on 7)

The semiconductor device according to claim 7, wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises gallium.

### Claim 12 (depends on 7)

The semiconductor device according to claim 7, wherein the first oxide semiconductor film comprises a crystalline region.

### Claim 13 (depends on 7)

The semiconductor device according to claim 7, wherein the crystalline region has a plate-like shape.

### Claim 14 (depends on 7)

The semiconductor device according to claim 7, wherein the crystalline region is a polycrystalline region.

### Claim 15 (depends on 14)

The semiconductor device according to claim 14, wherein the polycrystalline region comprises a plurality of single crystal in each of which a c-axis is aligned.

### Claim 16

A semiconductor device comprising:
a transistor comprising:
a stacked body comprising:
a first oxide semiconductor film; and
a second oxide semiconductor film on and in contact with the first oxide semiconductor film;
a gate insulating film covering the first oxide semiconductor film and the second oxide semiconductor film; and
a gate electrode over the gate insulating film and facing at least a side surface of the second oxide semiconductor film,
wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium and zinc, and
wherein the second oxide semiconductor film is intrinsic or substantially intrinsic.

### Claim 17 (depends on 16)

The semiconductor device according to claim 16, wherein the gate electrode surrounds the side surface of the second oxide semiconductor film with the gate insulating film located therebetween.

### Claim 18 (depends on 16)

The semiconductor device according to claim 16, further comprising a first electrode and a second electrode,
wherein the first oxide semiconductor film is located over the first electrode,
wherein the second electrode is located over the second oxide semiconductor film, and
wherein the gate insulating film covers the first electrode and the second electrode.

### Claim 19 (depends on 16)

The semiconductor device according to claim 16, wherein a lower surface of the stacked body is larger than an upper surface of the stacked body.

### Claim 20 (depends on 16)

The semiconductor device according to claim 16, wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises gallium.

### Claim 21 (depends on 16)

The semiconductor device according to claim 16, wherein the first oxide semiconductor film is intrinsic or substantially intrinsic.

### Claim 22 (depends on 16)

The semiconductor device according to claim 16, wherein a concentration of hydrogen in the stacked body is lower than or equal to 1×1018 cm−3.

### Claim 23 (depends on 16)

The semiconductor device according to claim 16, wherein a concentration of iron is lower than or equal to 1×1015 cm−3.

### Claim 24 (depends on 16)

The semiconductor device according to claim 16, wherein a concentration of nickel is lower than or equal to 1×1015 cm−3.