# US 2014/0197405 A1 · Rfid tags based on self-assembly nanoparticles

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- Number: US 2014/0197405 A1
- Document ID: US20140197405A1
- Status: Published application
- Kind: A1
- Application number: 14/147,594
- Filed: 2014-01-06
- Published: 2014-07-17
- Earliest claimed: 2013-01-11
- Assignees: Nano and Advanced Materials Institute Limited
- Applicants: Nano and Advanced Materials Institute Limited
- Inventors: Arul Lenus Roy Vellaisamy; Ye Zhou; Su Ting Han; Zong Xiang Xu
- Web page: https://patentgrep.com/patent/US20140197405A1

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 40/00: Manufacture or treatment of nanostructures
- H10D 30/031: {of thin-film transistors [TFT]}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 62/118: {Nanostructure semiconductor bodies}
- H10D 62/235: {of IGFETs (IGFETs having buried channels H10D30/637)}
- H10D 62/80: characterised by the materials
- H10D 62/871: {being Group I-VI materials, e.g. Cu2O; being Group I-VII materials, e.g. CuI}
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10N 99/05: {Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A semiconductor device comprising a gate electrode; an insulating layer in electrical connection with the gate electrode; a source electrode and a drain electrode; and a semiconducting channel layer configured to selectively allow electrically connection between the source electrode and the drain electrode based on the voltage on the gate electrode; wherein the semiconducting channel layer comprises metal nanoparticles; and the semiconducting channel layer is in contact with the source electrode, the drain electrode and the insulating layer. A method of manufacturing the semiconductor device of the present invention is also disclosed.

## Claims

### Claim 1

A semiconductor device comprising
a) a gate electrode;
b) an insulating layer in electrical connection with said gate electrode;
c) a source electrode and a drain electrode; and
d) a semiconducting channel layer configured to selectively allow electrically connection between said source electrode and said drain electrode based on the voltage on said gate electrode;
wherein said semiconducting channel layer comprises metal nanoparticles; and said semiconducting channel layer is in contact with said source electrode, said drain electrode and said insulating layer.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1 wherein said metal nanoparticles are selected from a group consisting of Au, Ag, Pd, Pt and any combinations thereof.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1 wherein said semiconducting channel layer further comprises metal oxide nanoparticles.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3 wherein said metal oxide nanoparticles are selected from a group of ZnO and CuO.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein said semiconductor device is a thin film transistor of an inverter used in a ring oscillator of an RFID tag.

### Claim 6

A method of manufacturing a semiconductor device comprising the steps of:
a) providing a nanoparticle solution comprising nanoparticles;
b) allowing said nanoparticles to undergo self-assembly into an array of nanoparticles;
c) forming said array of nanoparticles onto a substrate to form a semiconducting channel layer; and
d) forming source and drain electrodes in contact with said semiconducting channel layer.

### Claim 7 (depends on 6)

The method of manufacturing a semiconductor device of claim 6, wherein said metal nanoparticles are selected from the group consisting of Au, Ag, Pd, Pt and any combinations thereof.

### Claim 8 (depends on 6)

The method of manufacturing a semiconductor device of claim 6, wherein said nanoparticle solution further comprises metal oxide nanoparticles.

### Claim 9 (depends on 8)

The method of manufacturing a semiconductor device of claim 8, wherein said metal oxide nanoparticles are selected from a group consisting of ZnO and CuO.

### Claim 10 (depends on 6)

The method of manufacturing a semiconductor device of claim 6 wherein said substrate is immersed in said nanoparticle solution in a range of 1-3 hours.